Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

Aono, M.; Baeumer, Christoph; Bartlett, Philip N.; Brivio, Stefano; Burr, Geoffrey W.; Burriel, Mónica; Carlos, Emanuel; Deswal, Sweety; Deuermeier, Jonas; Dittmann, Regina; Du, Hongchu; Gale, Ella; Hambsch, Sebastian; Hilgenkamp, H.; Ielmini, Daniele; Kenyon, AJ; Kindsmüller, Andreas; Kissling, Gabriela P.; Koymen, Itir; Menzel, Stephan; Asesio, Dolors Pla; Prodromakis, Themis; Santamaria, Monica; Shluger, Alexander L.; Thompson, Damien; Valov, Ilia; Wang, Wei; Waser, Rainer; Williams, R. Stanley; Wrana, Dominik; Wouters, Dirk J.; Yang, Yuchao; Zaffora, Andrea

doi:10.1039/c8fd90057d

Cited by 3 publications

(1 citation statement)

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“…Among the latter ones, two mechanisms involving ion migration are quite similar to those important for the functioning of biological synapses. These are the mechanism of electrochemical metallization (ECM) [4,12,13], with metallic bridges formed in a dielectric, and the valence change mechanism (VCM) [14], assuming formation of conductive filaments from oxygen vacancies. Memristors based on these RS mechanisms typically have a sandwich structure with the metal electrodes either active, such as copper or silver, or inert, such as platinum, between which lies a dielectric layer [12].…”

Section: Introductionmentioning

confidence: 99%

Stability of quantized conductance levels in memristors with copper filaments: toward understanding the mechanisms of resistive switching

Kharlanov,

Shvetsov,

Rylkov

et al. 2021

Preprint

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Memristors are amongst the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states.However, identifying the physical mechanisms of resistive switching and evolution of conductive filaments in such structures still remains a major challenge. In this work, aiming at a better understanding of these phenomena, we experimentally investigate an unusual effect of enhanced conductive filament stability in memristors with copper filaments under the applied voltage and present a simplified theoretical model of the effect of a quantum current through a filament on its shape. Our semi-quantitative, continuous model predicts, indeed, that for a thin filament, the "quantum pressure" exerted on its walls by the recoil of charge carriers can well compete with the surface tension and crucially affect the evolution of the filament profile at the voltages around 1 V. At lower voltages, the quantum pressure is expected to provide extra stability to the filaments supporting quantized conductance, which we also reveal experimentally using a novel methodology focused on retention statistics. Our results indicate that the recoil effects could potentially be important for resistive switching in memristive devices with metallic filaments and that taking them into account in rational design of memristors could help achieve their better retention and plasticity characteristics.

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