Stability of quantized conductance levels in memristors with copper filaments: toward understanding the mechanisms of resistive switching
Oleg G. Kharlanov,
Boris S. Shvetsov,
Vladimir V. Rylkov
et al.
Abstract:Memristors are amongst the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states.However, identifying the physical mechanisms of resistive switching and evolution of conductive filaments in such structures still remains a major challenge. In this work, aiming at a better understanding of these phenomena, we experimentally investigate an unusual effect of enhanced conductive filament stability in mem… Show more
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