Valence Change Observed by Nanospectroscopy and Spectromicroscopy

Lenser, Christian; Dittmann, Regina; Strachan, John Paul

doi:10.1002/9783527680870.ch15

Resistive Switching 2016

DOI: 10.1002/9783527680870.ch15

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Valence Change Observed by Nanospectroscopy and Spectromicroscopy

Christian Lenser

Regina Dittmann

John Paul Strachan

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“…If the current transport through this interface is modulated as a consequence of the ion exchange/trapping, then this can be referred to as 2D RS. [20,21] In oxide-based devices with a platinum Schottky barrier bottom electrode, electronic trapping at interface states was proposed as a mechanism. Frequently, 2D volatile switching has been observed as a secondary process, affecting the high resistive state (HRS) of an otherwise 1D RS device.…”

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2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Branca

Deuermeier

Martins

et al. 2019

Adv Elect Materials

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of less destructive switching events, since the device reliability is independent of the reproducibility of the filament formation. [6] Frequently, an analog switching is observed, which is applicable for neuromorphic systems. [7][8][9][10] Reports exist in the literature, which explore area-dependent switching involving the homogeneous migration of defects or ions through the thickness of the switching matrix. [11,12] This can be referred to as 3D RS. In a device with asymmetric electrodes, both 1D RS and 3D RS result in counter eightwise (c8w) switching loops, when the bias is applied to the current blocking electrode. [13] Another type of area-dependent RS exists when ions are exchanged (or trapping occurs at the interface) between the switching matrix and the electrode. If the current transport through this interface is modulated as a consequence of the ion exchange/trapping, then this can be referred to as 2D RS. The direction of the switching loops is opposite to 1D RS and 3D RS, that is, eightwise (8w) when the bias is applied to the current blocking electrode. Frequently, 2D volatile switching has been observed as a secondary process, affecting the high resistive state (HRS) of an otherwise 1D RS device. [14][15][16][17] In addition, the choice between digital and analog operation modes by different device initialization schemes has been reported for NiO-based devices. [18] However, the resistance window for the analog mode was below one order of magnitude and the mechanism was discussed as 3D RS.Both in 3D RS and 2D RS, the active interface represents a barrier to the current flow, for example, a Schottky junction. [19] In the case of Ti/Pr 0.7 Ca 0.3 MnO 3 (PCMO) devices the underlying mechanism is based on a redox reaction between the titanium oxide interlayer and the PCMO. [20,21] In oxide-based devices with a platinum Schottky barrier bottom electrode, electronic trapping at interface states was proposed as a mechanism. [15] To allow a sizeable data retention, structural stabilization of the trapped charge needs to occur. [22] To achieve a high ratio between HRS and low resistance state (LRS) in 3D and 2D RS, a highly mobile Fermi level, that is, a highly variable charge carrier concentration is desirable. In thin-film transistors (TFT), AOS are known to yield tremendously high on/off ratios. [23] Diodes of AOS have rectification ratios of 10 6 . [24] These applications show how the material is able to change from an insulator to a metallic conductor by A room-temperature-processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smoo...

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confidence: 99%

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Branca

Deuermeier

Martins

et al. 2019

Adv Elect Materials

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Role of pO₂ and film microstructure on the memristive properties of La₂NiO_4+δ/LaNiO_3−δ bilayers

et al. 2022

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Nanoionic memristive phenomena in metal oxides: the valence change mechanism

Dittmann

Menzel

Waser

2021

Advances in Physics

104

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Valence Change Observed by Nanospectroscopy and Spectromicroscopy

Cited by 3 publications

References 46 publications

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Role of pO₂ and film microstructure on the memristive properties of La₂NiO_4+δ/LaNiO_3−δ bilayers

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

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Valence Change Observed by Nanospectroscopy and Spectromicroscopy

Cited by 3 publications

References 46 publications

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

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Role of pO₂ and film microstructure on the memristive properties of La₂NiO_4+δ/LaNiO_3−δ bilayers