Valence-band structure of wurtzite GaN including the spin-orbit interaction

Ren, Guoqiang; Liu, Y. M.; Blood, P.

doi:10.1063/1.123461

Cited by 54 publications

(78 citation statements)

References 23 publications

(13 reference statements)

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“…In much previous work the parameter A 7 has been assumed to be zero, but recently it has been shown that its inclusion can give an improved description of the valence bands. 26 The parameter A 7 can be evaluated using the formula…”

Section: K"p Model For the Wurtzite Structurementioning

confidence: 99%

Direct calculation ofk⋅pparameters for wurtzite AlN, GaN, and InN

2000

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Electronic band structure calculations have been performed for the wurtzite structures of AlN, GaN, and InN. In particular, the conventional k•p valence band parameters A i (iϭ1 -7) have been computed from initial empirical pseudopotential calculations in two distinct ways. A Monte Carlo fitting of the k•p band structure to the pseudopotential data was used to produce one set. Another set was obtained directly from the formulas for the A i in terms of the momentum matrix elements and energy eigenvalues at the center of the Brillouin zone. Both methods of calculating the k•p parameters produce band structures in excellent agreement with the original empirical band calculations near the center of the Brillouin zone. The advantage of the direct method is that it produces a unique set of k•p parameters, in contrast to a fitting procedure in which a range of equally valid parameter sets can exist.

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Section: K"p Model For the Wurtzite Structurementioning

confidence: 99%

Direct calculation ofk⋅pparameters for wurtzite AlN, GaN, and InN

2000

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“…In unstrained wurtzite GaN, there are three closely spaced top valence bands (VBs) at the Brillouin-zone center, usually referred to as heavy-hole (HH), light-hole (LH) and crystal-field split-off hole (SCH) [46,47]. These valence band states have atomic p-orbital character in contrast to the bottom conduction band (CB), which has atomic ^-orbital character.…”

Section: B Conduction and Valence Band Changes In The Presence Of Stmentioning

confidence: 99%

Order Lattices of Quantum Dots

Speck¹,

Petroff²

2004

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“…40,41 These VB states have atomic p-orbital character, in contrast to the bottom conduction band ͑CB͒, which has atomic s-orbital character. Since the large band gap of GaN reduces the interaction of CB and VB states, the Hamiltonian for the strain dependence of the VB can be separately given by the 6 ϫ 6 matrix 3…”

Section: B Conduction and Valence Band Changes In The Presence Of Stmentioning

confidence: 99%

Buried stressors in nitride semiconductors: Influence on electronic properties

Романов

Waltereit

Speck

2005

Journal of Applied Physics

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An analysis is presented on the effect of the strain field originating from a subsurface stressor ͑point source of dilatation or a dilatating ellipsoidal inclusion͒ on the electronic properties of nitride semiconductors. With good accuracy, real quantum dots can be modeled as such stressors. We consider the following material structure design: a uniform semi-infinite GaN matrix with a buried stressor or a GaN matrix with a single ͑In,Ga͒N quantum well, which is grown pseuodomorphically between the stressor and the free surface. We utilize isotropic elasticity to determine the strain field in the structures under investigation. We then apply a k·p perturbation theory approach to examine the shifts of the conduction and valence band edges caused by the stressor. We find lateral confinement for electrons and holes, which can be proposed for the realization of strain-induced quantum dots in the quantum well.

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Valence-band structure of wurtzite GaN including the spin-orbit interaction

Cited by 54 publications

References 23 publications

Direct calculation ofk⋅pparameters for wurtzite AlN, GaN, and InN

Direct calculation ofk⋅pparameters for wurtzite AlN, GaN, and InN

Order Lattices of Quantum Dots

Buried stressors in nitride semiconductors: Influence on electronic properties

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