Valence band states in diamond p-delta-doped quantum wells

Mora-Ramos, M.E.

doi:10.1016/s0026-2692(03)00228-3

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…For the dependence of the energies of holes on their quasiwavevectors we assume the isotropic model with the heavy, light, and split‐off hole effective masses equal to 0.427, 0.366, and 0.394 respectively in the units of free electron mass . This assumption and the chosen values of the hole effective masses are usual for the delta‐layer simulations in CVD diamond . The boron activation energy decrease with the growth of its density (in the density range when the acceptor miniband is not formed yet ) is approximated by an empirical formula

E_{normala} = E_{a 0} - α N_{normalB}^{1 / 3} .

Here

E_{a 0} ≃ 0.37

eV is the boron low density activation energy , N B the boron density in cm

^{- 3}

, and

α ≃ 10^{- 7} eV \times cm

is a constant calculated from the condition that the experimentally found bulk hole density at the highest

N_{normalB} ≃ 2.8 \times 10^{19} {cm}^{- 3}

used in is obtained.…”

Section: Computational Detailsmentioning

confidence: 99%

“…There were many experimental and theoretical studies of doped (mainly by boron as one of the shallowest dopants) delta layers in CVD diamond and carrier mobility in them, see, e.g., and references therein. However, the profile of the dopant density in the delta layers considered and realized in these works was of a simple form with a maximum in the delta‐layer center and monotonous tails on the left and right.…”

Section: Introductionmentioning

confidence: 99%

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Delta-layer doping profile in diamond providing high carrier mobility

Kukushkin

Snider

Bogdanov

et al. 2014

Phys. Status Solidi RRL

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We show that the nano‐scale delta‐layer doping profile in diamond can significantly influence both the carrier mobility and two‐dimensional conductivity. We numerically considered and compared a simple boron doping profile with one maximum at the delta‐layer center and a more complicated profile with two maxima inside the delta layer and a minimum at its center. As a result we concluded that in the last case the hole mobility and the two‐dimensional conductivity are higher by more than 3 times and 60% respectively than in the first case. The physical reason for the improvement is that for the two‐maxima doping profile the peaks of the carrier and ionized dopant densities are spatially separated, whereas for the simple one‐maximum doping profile they coincide. So, the carrier scattering on ionized dopants for the two‐maxima profile significantly decreases in comparison with the simple one‐maximum profile. The proposed two‐maxima delta‐layer doping profile can be used for the creation of diamond‐based micro‐ and nanoelectronics devices, e.g. high‐frequency field effect transistors. Two‐maxima delta‐layer doping profile and the spatial distribution of the carrier density. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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E_{normala} = E_{a 0} - α N_{normalB}^{1 / 3} .

Here

E_{a 0} ≃ 0.37

eV is the boron low density activation energy , N B the boron density in cm

^{- 3}

, and

α ≃ 10^{- 7} eV \times cm

is a constant calculated from the condition that the experimentally found bulk hole density at the highest

N_{normalB} ≃ 2.8 \times 10^{19} {cm}^{- 3}

used in is obtained.…”

Section: Computational Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Delta-layer doping profile in diamond providing high carrier mobility

Kukushkin

Snider

Bogdanov

et al. 2014

Phys. Status Solidi RRL

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Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Rodrı́guez-Vargas

Gaggero‐Sager²,

Martı́nez-Orozco

2005

Physica Status Solidi (b)

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PACS 73.21.Fg, 73.61.Ga We present the hole sub-band structure study in two p-type δ -doped ZnSe QW's. An analytical expression for the Hartree-Fock potential is obtained following the lines of the Thomas-Fermi-Dirac (TFD) approximation. We have analyzed the dependence of the hole energy levels to the impurity density and the interlayer distance between wells. The exchange effects are also included in the present survey. We find that many body effects cannot be ignored because these are really important in the calculation at least in the low concentration regime. We have obtained an energy difference between the top of the valence band and the ground energy of the heavy hole ladder of 0 29 0in good agreement with the experimental reports ( DAP 2 792 E = . eV) available. We calculate the mobility ratio between double δ -doped QW's and simple δ -doped QW based on a phenomenological formula. We find the optimum interlayer distance between wells for maximum mobility for three impurity concentrations, which can be of great importance for technological applications.

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Simulation of CVD diamond-based high speed near-infrared photodetectors

Kukushkin

Богданов

2015

Diamond and Related Materials

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Valence band states in diamond p-delta-doped quantum wells

Cited by 4 publications

References 12 publications

Delta-layer doping profile in diamond providing high carrier mobility

Delta-layer doping profile in diamond providing high carrier mobility

Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Simulation of CVD diamond-based high speed near-infrared photodetectors

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