2005
DOI: 10.1002/pssb.200402141
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Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Abstract: PACS 73.21.Fg, 73.61.Ga We present the hole sub-band structure study in two p-type δ -doped ZnSe QW's. An analytical expression for the Hartree-Fock potential is obtained following the lines of the Thomas-Fermi-Dirac (TFD) approximation. We have analyzed the dependence of the hole energy levels to the impurity density and the interlayer distance between wells. The exchange effects are also included in the present survey. We find that many body effects cannot be ignored because these are really important in… Show more

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Cited by 5 publications
(3 citation statements)
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“…It is worth mentioning that the former phenomenological formulas have been applied successfully to p-type ␦-doped systems. 40,46…”
Section: ͑12͒mentioning
confidence: 99%
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“…It is worth mentioning that the former phenomenological formulas have been applied successfully to p-type ␦-doped systems. 40,46…”
Section: ͑12͒mentioning
confidence: 99%
“…[33][34][35][36][37][38][39][40][41][42][43][44][45][46] These studies have been performed in GaAs, [33][34][35][36][37][38][39][40][41] Si, 42-45 and ZnSe. 46 In n-type double ␦-doped quantum wells in Si there are two representative works. 42,44 The electrical transport between locally grown ␦-doped layers spaced 63-146 nm has been investigated.…”
Section: Introductionmentioning
confidence: 99%
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