The Thomas-Fermi approximation is implemented in two coupled n-type ␦-doped quantum wells in Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the subband level structure. The longitudinal and transverse levels are obtained as a function of the impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an impurity density of 8 ϫ 10 12 to 6.5ϫ 10 13 cm −2. The transport calculations are based on a formula for the mobility, which allows us to discern the optimum distance between wells for maximum mobility.