Vacuum-ultraviolet reflectance difference spectroscopy for characterizing dielectrics–semiconductor interfaces

Ogata, Shigenobu; Ohno, Shinya; Tanaka, Masatoshi; Mori, Takahiro; Horikawa, Tsuyoshi; Yasuda, Tetsuji

doi:10.1016/j.tsf.2010.12.088

Cited by 2 publications

(1 citation statement)

References 18 publications

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“…Reflectance difference (RD/RA) spectroscopy 1–12 is a powerful tool for the optical characterizations of surfaces and interfaces. Among the applications of RD, we can mention the characterization of novel surface processes 13, surface electric fields 14–21, defects, and strain 22–28.…”

Section: Introductionmentioning

confidence: 99%

Micro reflectance difference techniques: Optical probes for surface exploration

Lastras-Martı́nez

Pozo-Zamudio

Herrera‐Jasso

et al. 2012

Physica Status Solidi (b)

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Micro reflectance difference spectroscopy (m-RDS) is a promising tool for the in-situ and ex-situ characterization of semiconductors surfaces and interfaces. We discuss and compare two different approaches used to measure m-RD spectra. One is based on a charge-coupled device (CCD) camera, while the other uses a laser and a XY translation stage. To show the performance of these systems, we have measured surface optical anisotropies of GaSb(001) sample on which anisotropic strains have been generated by preferential mechanical polishing along [110] and ½110 directions. The spectrometers are complementary and the selection of one of them depends on the sample to be investigated and on experimental conditions.

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Section: Introductionmentioning

confidence: 99%

Micro reflectance difference techniques: Optical probes for surface exploration

Lastras-Martı́nez

Pozo-Zamudio

Herrera‐Jasso

et al. 2012

Physica Status Solidi (b)

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Oxidation Processes on High-index Silicon Surfaces

Ohno

2015

J. Vac. Soc. Jpn.

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Our recent studies of oxidation processes on high-index silicon surfaces are reviewed. Interface trap densities, D it , at the thermally oxidized Si surfaces were systematically investigated for (001), (111), (110), (120), (331) and (113) orientations. Structure model of the SiO 2 /Si interface on (113) substrate was proposed based on the analysis of the optical measurements. The initial oxidation processes on high-index silicon surfaces with (113), (120) and (331) orientations at high temperatures have been investigated by Xray photoelectron spectroscopy, and the results were compared with the case of (001) orientation. It has been shown that monolayer oxidation on high-index silicon surfaces can be characterized through chemical shift in the core level of the Si 2p and O 1s states, and in addition through evaluation of oxide thickness, oxide composition and band bending.

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Vacuum-ultraviolet reflectance difference spectroscopy for characterizing dielectrics–semiconductor interfaces

Cited by 2 publications

References 18 publications

Micro reflectance difference techniques: Optical probes for surface exploration

Micro reflectance difference techniques: Optical probes for surface exploration

Oxidation Processes on High-index Silicon Surfaces

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