Abstract:Our recent studies of oxidation processes on high-index silicon surfaces are reviewed. Interface trap densities, D it , at the thermally oxidized Si surfaces were systematically investigated for (001), (111), (110), (120), (331) and (113) orientations. Structure model of the SiO 2 /Si interface on (113) substrate was proposed based on the analysis of the optical measurements. The initial oxidation processes on high-index silicon surfaces with (113), (120) and (331) orientations at high temperatures have been i… Show more
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