Vacuum System Design for the Sirius Storage Ring

Seraphim, Rafael; Bagnato, Osmar Roberto; Ferraz, Reginaldo; Filho, Helio; Gomes, Gustavo R.; Nardin, Marcos; Oliveira, Roberto; Ramos, B.; Rodrigues, Ricardo; Silva, Milton; Rocha, Tânia Rúbia Flores da

doi:10.18429/jacow-ipac2015-wepma003

Cited by 3 publications

(1 citation statement)

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“…Studies have shown that the grain size of TiZrV thin film is related to the activation temperature. Reducing the grain size and increasing the grain boundary density can improve the diffusion and solubility of oxygen atoms, which is conducive to reducing the temperature required for activating the thin film [24]. Improving the surface roughness of the film and forming a porous nano-columnar crystal structure is conducive to increasing the effective area of the film and thus improving the adsorption capacity of TiZrV film [25].…”

Section: Introductionmentioning

confidence: 99%

Research on the deposition and properties characterization of novel conductive getter films on the inner wall of accelerator vacuum chamber

Ge,

Ma,

Zhu

et al. 2023

J. Inst.

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The new generation diffraction-limited storage ring has small vacuum chamber apertures, resulting in a distributed vacuum problem. Depositing a Ti-Zr-V NEG film layer on the inner face of vacuum chambers is an ideal solution for resolving the non-uniform vacuum distribution problem. However, Ti-Zr-V NEG coatings on the surface of the vacuum chamber increase its surface resistivity, which can intensify the wakefield impedance effect. This article proposes adding conductive Ag to the Ti-Zr-V NEG film. A novel Ti-Zr-V-Ag NEG film not only has good vacuum performance, but also has good conductivity. Ti-Zr-V-Ag NEG film is successfully prepared by magnetron sputtering. The activation kinetic processes and surface resistivity of Ti-Zr-V-Ag and Ti-Zr-V NEG films are detected in detail, and comparative research on the activation behavior and surface resistivity of Ti-Zr-V-Ag films deposited with various sputtering pressures is investigated. The results show that adding pure metallic silver to the Ti-Zr-V film effectively decreases the DC resistivity of the NEG films, and this reduction can be further enhanced by reducing the sputtering pressure. The activation kinetics behavior of the Ti-Zr-V-Ag film shows minor degradation compared with that of the Ti-Zr-V film.

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Section: Introductionmentioning

confidence: 99%