Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

Sharma, Shivam; Meng, Lingyu; Bhuiyan, Alauddin; Feng, Zixuan; Eason, D. B.; Zhao, Hongping; Singisetti, Uttam

doi:10.1109/led.2022.3218749

Cited by 24 publications

(13 citation statements)

References 25 publications

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“…For comparison, room temperature breakdown voltages in Ga 2 O 3 metal semiconductor MESFETs and MOSFETs are typically 2-4 kV. [48][49][50][51][52][53][54] The highest breakdown voltage for a lateral MOSFET is 8.56 kV in vacuum annealed devices, 45,52 although the performance as a function of temperature was not reported.…”

Section: Resultsmentioning

confidence: 99%

Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C

Wan,

Li,

Chiang

et al. 2023

ECS J. Solid State Sci. Technol.

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The characteristics of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 heterojunction lateral geometry rectifiers with the epitaxial layers grown by metal organic chemical vapor deposition were measured over a temperature range from 25-225°C. The forward current increased with temperature, while the on-state resistance decreased from 360 Ω.cm2 at 25°C to 30 Ω.cm2 at 225°C. The forward turn-on voltage was reduced from 4 V at 25°C to 1.9 V at 225°C. The reverse breakdown voltage at room temperature was ~4.2 kV, with a temperature coefficient of -16.5 V/K. This negative temperature coefficient precludes avalanche being the breakdown mechanism and indicates that defects still dominate the reverse conduction characteristics. The corresponding power figures-of-merit were 0.27-0.49 MW.cm-2. The maximum on/off ratios improved with temperature from 2x105 at 25°C to 3x107 at 225°C when switching from 5 V forward to 0 V. The high temperature performance of the NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 lateral rectifiers is promising if the current rate of optimization continues.

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Section: Resultsmentioning

confidence: 99%

Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C

Wan,

Li,

Chiang

et al. 2023

ECS J. Solid State Sci. Technol.

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“…This change has been inspired by the demonstration of β-Ga 2 O 3 -based MESFETs and the anticipation of a very high breakdown field of ∼8 MV cm −1 . 2) As a result, many resources have been devoted to studying this n-type unipolar semiconductor to demonstrate high-performance Schottky barrier diodes (SBDs), 3,4) MOSFETs, [5][6][7] and modulationdoped FETs (MODFETs). 8) Along with these unipolar devices, heterojunction bipolar devices such as PN diodes have been achieved by using native p-type oxides such as NiO and Cu 2 O.…”

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confidence: 99%

“…This damage is evidenced by reduced channel mobility and nonnegligible hysteresis in transfer curves of FinFETs 17,18) and increased on-resistance in deep-mesa-terminated SBDs, 4) trench MOSSBDs, 19) and gate-recessed MESFETs 20) and MOSFETs. 7) Thus, post-treatments, such as wet etching [21][22][23] and annealing, 4,7,20,23,24) are necessary to remove the damage.…”

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confidence: 99%

“…[35][36][37] Additionally, planar devices such as MESFETs, 1,20,38) MOSFETs, 5-7) MODFETs, 8) and FinFETs 33) have been fabricated on highquality epitaxial films on (010) substrates. Therefore, it is especially necessary to perform high-aspect-ratio etching on (010) substrates to form fins 33) and trenches (including recess structures) 5,7,20) to improve the field effect in the channels and/or breakdown voltages.…”

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Anisotropic non-plasma HCl gas etching of a (010) β-Ga₂O₃ substrate

Oshima¹,

Oshima²

2023

Appl. Phys. Express

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We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded anisotropically in the window areas, resulting in the fabrication of holes or trenches that were surrounded by etching-resistant (100)- and ( 1 ¯ 01)-faceted sidewalls. When we etched in the striped windows along [001], we were able to create fins and trenches with flat (100)-faceted vertical sidewalls and slightly rough {310}-faceted inclined bottom corners. The vertical-to-horizontal etching ratio was as high as ∼11–14. Our findings indicate that HCl etching is a promising method for fabricating high-aspect-ratio fins/trenches on (010) substrates without causing plasma damage.

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“…The availability of highquality melt grown bulk substrates also results in superior epitaxial layer growth 2 and potentially reduced cost. The rapid advances in materials development also enabled many state of the art device realization in both vertical and lateral geometry [3][4][5][6][7][8][9][10][11][12][13][14][15][16] . Vertical devices are of particular interest for high voltage applications due to their superior scalability to high currents compared to lateral devices.…”

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2.1 kV (001)-β-Ga2O3 Vertical Schottky Barrier Diode with High-k Oxide Field Plate

Roy¹

2022

Preprint

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We report a vertical β-Ga2O3 Schottky Barrier Diode (SBD) with BaTiO3 as field plate oxide on low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of 11 μm with a low effective doping concentration of 8×1015 cm−3 is used to achieve high breakdown voltage. Using the high-k dielectric with dielectric constant of 248, the breakdown voltage increases from 816V for the non-field-plated SBD to 2152V (>2x improvement) for the field-plated SBD without compromising the on-state performance. The diode dimensions are varied to analyze the effect of edge high-field related leakage with reverse bias and also the effect of current spreading during forward operation. Very uniform distribution of breakdown voltages of 2152V±20V are observed for the diode diameters from 50 μm to 300 μm for the field-plated SBDs. The on and off state power losses are also analyzed and compared with the non-field-plated devices and the switching losses are estimated analytically.

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Vacuum Annealed β-Ga₂O₃ Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

Cited by 24 publications

References 25 publications

Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C

Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C

Anisotropic non-plasma HCl gas etching of a (010) β-Ga₂O₃ substrate

2.1 kV (001)-β-Ga2O3 Vertical Schottky Barrier Diode with High-k Oxide Field Plate

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Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

Cited by 24 publications

References 25 publications

Operation of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction Lateral Rectifiers at up to 225 °C

Operation of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction Lateral Rectifiers at up to 225 °C

Anisotropic non-plasma HCl gas etching of a (010) β-Ga2O3 substrate

2.1 kV (001)-β-Ga2O3 Vertical Schottky Barrier Diode with High-k Oxide Field Plate

Contact Info

Product

Resources

About

Vacuum Annealed β-Ga₂O₃ Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C

Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C

Anisotropic non-plasma HCl gas etching of a (010) β-Ga₂O₃ substrate