Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C

Abstract

The characteristics of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 heterojunction lateral geometry rectifiers with the epitaxial layers grown by metal organic chemical vapor deposition were measured over a temperature range from 25-225°C. The forward current increased with temperature, while the on-state resistance decreased from 360 Ω.cm2 at 25°C to 30 Ω.cm2 at 225°C. The forward turn-on voltage was reduced from 4 V at 25°C to 1.9 V at 225°C. The reverse breakdown voltage at room temperature was ~4.2 kV, with a temperature coefficient of -16.5 V/K. This negative temperature coefficient precludes avalanche being the breakdown mechanism and indicates that defects still dominate the reverse conduction characteristics. The corresponding power figures-of-merit were 0.27-0.49 MW.cm-2. The maximum on/off ratios improved with temperature from 2x105 at 25°C to 3x107 at 225°C when switching from 5 V forward to 0 V. The high temperature performance of the NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 lateral rectifiers is promising if the current rate of optimization continues.

Non-damaging growth and band alignment of p-type NiO/β-Ga2O3 heterojunction diodes for high power applications

“…This can be explained by the increased injection of carriers with temperature, and the increasing on-current suggests that the transport mechanism deviates from ideal thermionic emission. 71 Furthermore, the log–log plot of J – V for all cases (inset of Fig. 7) shows three different regions depending on the applied voltage.…”

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

“…Wan et al [102] presented a lateral rectifier based on a NiO x /β-(Al 0.21 Ga 0.79 ) 2 O 3 /β-Ga 2 O 3 heterojunction. The structure of these rectifiers is depicted in Figure 10a, with the β-(Al x Ga 1−x ) 2 O 3 /β-Ga 2 O 3 heterostructure grown using a MOCVD system.…”