Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

Гращенко, А. С.; Кукушкін, С. А.; Осипов, А. В.; Redkov, A. V.

doi:10.1016/j.cattod.2021.08.012

Cited by 6 publications

(4 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Figure 5, microphotographs obtained with a scanning electron microscope (SEM) raster display the end chips of two types of SiC/Si (111) substrates. Figure 5a depicts an image of the SiC layer synthesized through the MCSA method [18], while Figure 5b displays an image of the SiC layer synthesized through the VMCSA method [21]. These images clearly demonstrate substantial differences between the structures of the SiC layers and the SiC-Si interfaces of the SiC films obtained through these methods.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

et al. 2023

Self Cite

View full text Add to dashboard Cite

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers with low defect content and facilitates transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by the MCSA and elaborates on the benefits of using these substrates in LED production. Additionally, the advantages of the growth interface between SiC and Si materials are discussed. Moreover, it is found that thinner SiC layers (<200 nm) contribute to the scattering of the LED’s own radiation in the heterostructure waveguide, which decreases its absorption by silicon. For flip-chip LEDs with the substrate removed, substrates with thicker SiC layers (~400 nm) and a growth porous layer of several microns at the SiC-Si interface is utilized to simplify Si substrate removal and enhance the manufacturing process’s cost-effectiveness.

show abstract

Section: Resultsmentioning

confidence: 99%

“…In [21], the MCSA method [15][16][17][18][19] was notably advanced with the proposal and implementation of the vacancy-coordinated atom substitution method. The technique facilitates a considerable increase in the thickness of the silicon carbide layer during atom substitution.…”

Section: Introductionmentioning

confidence: 99%

SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…Initially, vacancies are created in Si thermally (i.e., by heating in vacuum to a temperature of T∼1340 ÷ 1380 • C). Then, Si is converted into SiC by the method of coordinated substitution of atoms (MCSA) by the chemical reaction [10][11][12][13] 2Si(crystal) + CO(gas) = SiC(crystal) + SiO(gas) ↑ .…”

Section: Introductionmentioning

confidence: 99%

“…The overall diamond-like bond structure does not change in this case, which makes it possible to obtain high-quality layers of cubic 3C-SiC containing V Si by this method. The concentration of V Si in SiC is determined by the time of preliminary annealing of Si in vacuum [9,12,13]. The longer the annealing, the greater the amount of V Si .…”

Section: Introductionmentioning

confidence: 99%

Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies

Кукушкин

Осипов

2022

Materials

Self Cite

View full text Add to dashboard Cite

In this work, silicon carbide layers containing silicon vacancies are grown by the Method of Coordinated Substitution of Atoms (MCSA). The main idea of this fundamentally new method is that silicon vacancies are first created in silicon, which is much simpler, and only then is silicon converted into silicon carbide by chemical reaction with carbon monoxide. The dielectric function of silicon carbide containing silicon vacancies, grown on both n- and p-type silicon substrates, is measured for the first time. The density functional method in the spin-polarized approximation is used to calculate the dielectric function of silicon carbide containing silicon vacancies. It is shown that the influence of the magnetic moment of vacancies on the dielectric function is decisive. Qualitative correspondence of the computational model to the obtained experimental data is demonstrated. It is discovered that silicon vacancies make silicon carbide much less transparent. It is shown that the imaginary part of the dielectric function is described as a sum of oscillatory peaks in the form of the Gaussian functions. Vacancies lead, as a rule, to one or two additional peaks. According to the amplitude and position of the additional peaks, it is possible to qualitatively estimate the concentration of vacancies and their charge.

show abstract

Thin-Film LED based on AlInGaN Layers Grown on Hybrid SiC/Si Substrates

Markov,

Kukushkin,

Pavluchenko

et al. 2023

Tech. Phys. Lett.

View full text Add to dashboard Cite

Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

Cited by 6 publications

References 17 publications

SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies

Thin-Film LED based on AlInGaN Layers Grown on Hybrid SiC/Si Substrates

Contact Info

Product

Resources

About