SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

Abstract

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers with low defect content and facilitates transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by the MCSA and elaborates on the benefits of using these substrates in LED production. Additionally, the advantages of the growth interface between SiC and Si materials are discussed. Moreover, it is found that thinner SiC layers (<200 nm) contribute to the scattering of the LED’s own radiation in the heterostructure waveguide, which decreases its absorption by silicon. For flip-chip LEDs with the substrate removed, substrates with thicker SiC layers (~400 nm) and a growth porous layer of several microns at the SiC-Si interface is utilized to simplify Si substrate removal and enhance the manufacturing process’s cost-effectiveness.

Study of the Chemical Vapor Deposition of Nano-Sized Carbon Phases on {001} Silicon

“…Researchers have also noted the necessity of careful elimination of native SiO 2 , which apparently does not allow the development of an epitaxial growth process on Si. We should also mention that other developed methods for the synthesis of SiC on Si substrates using CVD rely on the decomposition of a CO precursor: see [8][9][10][11]. The authors of these methods assumed that most of the oxygen atoms leave the substrate/gas phase interface region as SiO while SiC, SiO 2 and Si-O-C complexes remain in the layer, but further annealing at high temperature results in the evaporation of the oxygen-containing components into the gas phase.…”

“…In our earlier works, we have established that the deposition of thin carbon films using CVD via the decomposition of acetone ((CH 3 O) 2 CO) at temperatures above 1150 • C for 9-12 min leads to the formation of two different interlayers between the graphene film and the Si substrate: the first of which consists predominantly of a mixed phase of multilayered nanographene flakes, nanodiamond-/diamond-like carbon and C 70 fullerenes; while the second one is dominated by nanographene flakes and C 70 fullerenes, where the amount of C 70 is greater than that of the former interlayer type (see [6][7][8][9][10][11][12][13]). In all cases, there was SiC in the samples, but its morphology was not established, nor was where it was located.…”