Arrays of one-dimensional nanostructures (nanowires, nanorods, or nanotubes) are potential building blocks for electronic and optoelectronic nanodevices, such as sensors, laser diodes, field-effect transistors, and light-emitting diodes. [1][2][3][4][5] Quasi-vertically aligned growth of ZnO nanorods and carbon nanotube arrays have been obtained on various substrates by vapor-liquid-solid (VLS) and vapor-solid (VS) processes with the assistance of gold, tin, germanium, or iron catalysts. [6][7][8][9][10] In those growth processes, the catalyst particles initiate and guide the preferential orientation of nanostructures in specific crystallographic relations with respect to the substrates. Aligned nanostructures were also obtained by metal-organic chemical vapor deposition, [11] template-assisted growth, [12] and electrical-field alignment [13] without the assistance of catalysts. Due to the anisotropic properties such as electrical conductivity and band structure along the different orientations of semiconductor materials, control over the growth direction of nanostructures is an important factor desirable to tune the physical properties of nanostructures. To achieve nanostructure arrays with controlled orientation, epitaxial growth is a promising approach. Epitaxial growth of semiconductor nanowires, quantum wells, and dots on silicon substrates has shown great potential in the fabrication of new-generation optoelectronic devices.[ [20] and III-V compounds, such as GaN and InN, [21] have been prepared via homoepitaxy. Aligned Si or Si/Ge nanowires have been produced homoepitaxially on Si substrates using a gold thin film or nanoparticles as catalyst, [22][23][24] while III-V nanowires homoepitaxially grown on III-V substrates have also been achieved. [25] Very recently, epitaxy along the radial and axial directions of 1D nanostructures has led to interesting functional structures in a single wire or ribbon, e.g., group III-V heterojunctions (GaAs/GaP and InAs/InP nanowires), group IV heterojunctions (Si/Ge nanowires), Si/Ge core-shell nanowires, and NiS/Si, In/Si and Si-ZnS(Se) nanowires. [26][27][28][29][30][31][32] While much research has been devoted to the controlled growth and epitaxy of III-V nanostructures, few studies have been made on II-VI materials.[33] Similar to III-V semiconductors, group II-VI materials have attractive optical properties, such as wide bandgaps (direct), for optical devices in the short wavelength range, such as light-emitting diodes and laser diodes in ultraviolet and visible regions. For instance, ZnS (with a direct bandgap of 3.7 eV at room temperature) films have been applied as efficient phosphor and electroluminescence media in cathode-ray tubes, flat-panel displays, and IR windows. [34,35] Recently, various ZnS nanostructures, including nanowires and nanoribbons with controlled phase composition, and other micrometer-sized diskettes have been reported, wherein the deposition temperature is demonstrated to be a dominant factor. [36] Lasing at room temperature was achieved in...