25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 2003
DOI: 10.1109/gaas.2003.1252372
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V-band fully-integrated TX/RX single-chip 3-D MMICs using commercial GaAs pHEMT technology for high-speed wireless applications

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Cited by 18 publications
(7 citation statements)
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“…For critical applications where the noise figure is of utmost importance, InP HEMT or GaAs mHEMT technologies offers state-of-the-art in noise performance but the level of integration comparable to silicon technologies have so far not been commonly demonstrated. References [10], [11] show, as examples, the present level of integration for GaAs. In [11], a three stage LNA, image reject mixer and a X8 frequency multiplier were integrated.…”
Section: Technology Demonstrator Examplesmentioning
confidence: 98%
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“…For critical applications where the noise figure is of utmost importance, InP HEMT or GaAs mHEMT technologies offers state-of-the-art in noise performance but the level of integration comparable to silicon technologies have so far not been commonly demonstrated. References [10], [11] show, as examples, the present level of integration for GaAs. In [11], a three stage LNA, image reject mixer and a X8 frequency multiplier were integrated.…”
Section: Technology Demonstrator Examplesmentioning
confidence: 98%
“…Technologies such as CMOS, SiGe HBT and GaAs have been utilized. The noise figure varies between 4 dB [10] for the GaAs based receivers to 6-7 dB for the best silicon based receivers. At higher frequencies, a receiver based on 65 nm CMOS technology was recently demonstrated with 7 dB noise figure [12].…”
Section: Technology Demonstrator Examplesmentioning
confidence: 98%
“…Most millimeter-wave single-chip transmit/receive MMICs have been fabricated in III-V technologies (GaAs or InP) because of their superior RF characteristics [1]- [6], [19]- [21]. Silicon-based technologies have the potential to enable integration of both front-end and baseband blocks.…”
Section: Integrated Transceiversmentioning
confidence: 99%
“…Current millimeter-wave single-chip transceivers integrate transmit/receive function blocks, potentially including the power amplifier (PA), local oscillator (LO), and antenna together. Most such millimeter-wave transmit/receive MMICs were fabricated in GaAs technologies in the past [1]- [6], [19]- [21]; however, siliconbased(CMOS, silicon germanium heterojunction bipolar transistor (SiGe HBT) or BiCMOS) single-chip transmit/receive MMICs have been reported in the last two to three years [7]- [18], [22]. In this article, the current status of compound semiconductor and silicon-based millimeter-wave MMICs will be reviewed, and the future trends in millimeter-wave system on chip (SOC) will be discussed.…”
mentioning
confidence: 99%
“…NTT developed three-dimensional MMIC (3D-MMIC) technology [1]- [2], which significantly miniaturizes MMICs. Figure 1 shows the basic 3D-MMIC structure.…”
Section: Introductionmentioning
confidence: 99%