2004
DOI: 10.1002/marc.200300081
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UV Laser‐Induced Gas‐Phase Copolymerization of Carbon Disulfide and Ethene

Abstract: Summary: The laser irradiation at 193 nm of a gaseous mixture of carbon disulfide and ethene induces the copolymerization of both compounds and affords the chemical vapour deposition of a C/S/H polymer, the composition of which indicates the reaction between two to three CS2 molecules and one C2H4 molecule. Polymer structure is interpreted on the basis of X‐ray photoelectron and FT‐IR spectra as consisting of >CS, >CC<, CH2CH2, (CC)SnC4 − n, C(CS)S, S(CS)S, and CSSC configurations. The gas‐p… Show more

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Cited by 9 publications
(12 citation statements)
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“…The former route implies formation of elemental sulfur and polythiene [6] and the latter is in line with the formation of a (CS 2 ) n polymer (e.g. [8,9,23,24] [25,26] ) and decomposition of silylene (producing H 2 and H/Si agglomerates) together with reaction of silylene with CS 2 [27] and transient formation of silanethione [28] are other plausible reactions.…”
Section: Gas-phase Photolysis and Volatile Productsmentioning
confidence: 98%
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“…The former route implies formation of elemental sulfur and polythiene [6] and the latter is in line with the formation of a (CS 2 ) n polymer (e.g. [8,9,23,24] [25,26] ) and decomposition of silylene (producing H 2 and H/Si agglomerates) together with reaction of silylene with CS 2 [27] and transient formation of silanethione [28] are other plausible reactions.…”
Section: Gas-phase Photolysis and Volatile Productsmentioning
confidence: 98%
“…We have previously shown that laser-induced codecomposition of metal and chalcogene progenitors, leading to gas-phase formation of metal and chalcogene clusters, is suitable for chemical vapor deposition of nanosized metal chalcogenides. [10,[18][19][20] Continuing our studies on laserinduced chemical vapor deposition of polythiene [6] and CS 2 /C 2 H 4 co-polymer, [8,9] we now report on ArF laser irradiation of gaseous carbon disulfide-silane mixtures and show that this process affords chemical vapor deposition of SiS-containing poly(thiacarbosilane)s. These materials are the first example of SiS/polymer composites.…”
Section: Introductionmentioning
confidence: 94%
“…(We note that an efficient sulfur removal by the solvent from the polymer deposited through ArF laser irradiation of CS 2 alone was ascribed to the presence of elemental sulfur incorporated but not bonded in the polymer framework). [14] XP Spectra…”
Section: Solubilitymentioning
confidence: 99%
“…[14] Relative depletion of both educts is not apparently affected by the initial CS 2 /C 2 H 4 ratio (5-0.2) and CS 2 depletes at least twice more efficiently than ethene.…”
Section: Mechanism Of Deposit Formationmentioning
confidence: 99%
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