UV/DUV light emitters

Khan, Asif; Kneissl, Michael; Amano, Hiroshi

doi:10.1063/5.0174270

Applied Physics Letters

2023

DOI: 10.1063/5.0174270

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UV/DUV light emitters

Asif Khan,

Michael Kneissl,

Hiroshi Amano

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2024

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Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Murotani,

Inai,

Himeno

et al. 2024

Physica Status Solidi (b)

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Internal quantum efficiency (IQE) of AlGaN‐based multiple quantum wells (MQWs) on face‐to‐face‐annealed sputter‐deposited AlN templates is examined by photoluminescence spectroscopy. The excitation power density dependence of IQE is evaluated as a function of temperature under the selective excitation of the quantum wells. The temperature dependences of the maximum IQE and the corresponding excitation power density (EPD) are analyzed based on the rate equation models for carriers and excitons. The decrease of the maximum IQE and increase of the corresponding EPD are mainly due to the increase in the nonradiative recombination rate via nonradiative recombination centers. Furthermore, the nonradiative recombination rate for the MQW with an emission wavelength around 220 nm is activated at a lower temperature than the other samples, which is expected to lead to the lower IQE of the MQW with an emission wavelength around 220 nm.

show abstract

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Murotani,

Inai,

Himeno

et al. 2024

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

Dopants and defects in ultra-wide bandgap semiconductors

Lyons,

Wickramaratne,

Janotti

2024

Current Opinion in Solid State and Materials Science

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UV/DUV light emitters

Cited by 2 publications

References 40 publications

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Dopants and defects in ultra-wide bandgap semiconductors

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