Dopants and defects in ultra-wide bandgap semiconductors

Lyons, John L.; Wickramaratne, Darshana; Janotti, Anderson

doi:10.1016/j.cossms.2024.101148

Cited by 1 publication

(1 citation statement)

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“…As a result, control of the electronic properties is more challenging, causing both n-type and p-type doping to remain active areas of research for Al-contents exceeding 80% [61]. Challenges for n-type doping appear to be related to the formation of DX centers (DX centers were initially thought of as a defect complex involving a substitutional donor and an anion vacancy [62], but are meanwhile thought to be due to a large lattice relaxation and the trapping of two electrons, causing the dopant to transition from a single donor to a single acceptor [63,64]) [65], whereas issues with p-type doping with Mg are caused by a significant deepening of the acceptor level, as well as the decreasing solubility of Mg with increasing Al-content [61]. Recently, p-type doping of AlN using Be at the Al-site has re-gained momentum due to experimental reports [66][67][68] of p-type conductivity.…”

Section: Potential Of Functional Nitrides For Semiconductor Devicesmentioning

confidence: 99%

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and solubility of elements, to synthesized crystalline nitride materials and their properties. Initially, the potential of emerging and novel nitrides is discussed, motivating their synthesis in single crystal form. This is followed by a summary of our current understanding of the reactivity/solubility of species and the state-of-the-art single crystal synthesis for GaN, AlN, AlGaN, BN, InN, and, more generally, ternary and higher order nitrides. Investigation of the synthesized materials is presented, with a focus on point defects (impurities, native defects including hydrogenated vacancies) based on GaN and potential pathways for their mitigation or circumvention for achieving a wide range of controllable functional and structural material properties. Lastly, recent developments in autoclave technology are reviewed, based on GaN, with a focus on advances in development of in situ technologies, including in situ temperature measurements, optical absorption via UV/Vis spectroscopy, imaging of the solution and crystals via optical (visible, X-ray), along with use of X-ray computed tomography and diffraction. While time intensive to develop, these technologies are now capable of offering unprecedented insight into the autoclave and, hence, facilitating the rapid exploration of novel nitride synthesis using the ammonothermal method.

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