UV curing and photoresist outgassing in high energy implantation

Jones, Mary Ann; Erokhin, Yu. E.; Horsky, T. N.; Insalaco, Linda J.; Whiteside, D.; Slater, Sydney G.; Buffat, Stephen Jack; Kickel, B.; Parrill, T.M.; Xu, Jie

doi:10.1109/iit.1996.586179

Cited by 7 publications

(1 citation statement)

References 5 publications

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“…The increased beam currents therefore pose no dosimetry problems. The results are consistent with the results of Jones et al [8] for high energy, medium dose implants that UV/BakeTM reduces the amount of nitrogen evolved in the early part of the implant, but has only a small impact on the total amount of gas evolved (mostly hydrogen). Fig.…”

Section: Implant Results-dosimetrysupporting

confidence: 94%

Retention of mask edge integrity during MeV implants

Hoglund

Parrill²,

Marshall³

et al.

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

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The effect of increasing implant beam currents during MeV well implants on thick photoresist was evaluated in terms of critical dimension (CD) control and mask edge integrity, implant dosimetry, and post-implant ashing. Hard bake, soft bake, and photostabilization pre-treatments were quantified in terms of outgassing during implant, retention of mask edge integrity, and ability to ash without residues. The beam current of a 825 keV P implant (n-well) was successfully increased by a factor of four with no loss in CD control, implant or ashing performance.

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Section: Implant Results-dosimetrysupporting

confidence: 94%