Using scattering parameters and the g&lt;inf&gt;m&lt;/inf&gt;/I&lt;inf&gt;D&lt;/inf&gt; MOST ratio for characterisation and design of RF circuits

Castagnola, Juan Luis; Dualibe, Fortunato; García-Vázquez, Hugo

doi:10.1109/mwscas.2016.7870068

Cited by 3 publications

(2 citation statements)

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“…Electronics 2020, 9, x FOR PEER REVIEW 6 of 17 Figure 6 summarizes the procedure for obtaining the circuit's S-parameters as a function of the physical properties of the transistor. A validation of these relations can be found in [29], where this strategy was applied to the characterization of an LNA common source stage, and concurrent simulations with the ACM and IBM BSIM4 MOS 65 nm models were performed.…”

Section: Parameter Expressionmentioning

confidence: 99%

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A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

et al. 2020

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This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.

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Section: Parameter Expressionmentioning

confidence: 99%

“…The characterization of an LNA common source (CS) stage in terms of the S-parameters, the gm/I D ratio and the transistor's size, was introduced for the first time in [29]. In [30], this approach is extended to the whole design of an LNA.…”

Section: Introductionmentioning

confidence: 99%