Using layout technique and direct-tunneling mechanism to promote DC performance of partially depleted SOI devices

Chen, Shiao-Shien; Huang-Lu, Shiang; Tang, Tien-Hao

doi:10.1109/ted.2004.825810

Cited by 14 publications

(4 citation statements)

References 11 publications

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“…The kink effect was recognized when the high drain bias was applied to cause impact ionization in the PD SOI device. But fortunately, the degree of the floating body effect looked alleviated in comparison to what was generally observed in Si SOI CMOS devices[15,16]. The suppression was considered to be related to the enhanced carrier transport of the reduced scattering in the SiGe channel.The I-V curves illustrate that the devices were fabricated on two different substrates with no critical changes in terms of dc properties.…”

mentioning

confidence: 93%

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

Choi

Kim

et al. 2007

Semicond. Sci. Technol.

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Low-frequency noise properties have been investigated for SiGe p-type metal-oxidesemiconductor field effect transistors with different substrates using Si bulk and a partially depleted silicon-on-insulator (PD SOI). The electrical properties of SiGe PD SOI were enhanced in the subthreshold slope and drain induced barrier lowering. However, the low-frequency noise for the PD SOI was found to degrade significantly in terms of the power spectral density. The low frequency noise was observed to follow the typical 1/f γ (γ = 1) dependence in SiGe bulk devices, but abnormal changes with γ = 2 were revealed in the SiGe PD SOI. The difference of the noise frequency exponent was mainly attributed to generation-recombination by traps presented at the silicon-oxide interface of the SOI. Regardless of the degraded noise performance in the SOI structure, the low-frequency noise level remained well at an acceptable level by virtue of the effective carrier confinement in the SiGe channel.

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mentioning

confidence: 93%

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

Choi

Kim

et al. 2007

Semicond. Sci. Technol.

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“…The oxide-trap charges generated in

and the interface-trap charges generated at the Si/

interface by total dose irradiation have impacts on the electrical parameters such as the electric field distribution in the body region of the SOI MOSFETs, resulting in the modification of FBE. To mitigate these FBE, the most common approach is to use a body contact via layout techniques with an H-Gate or T-Gate configuration [ 7 ]. Nevertheless, although body contact suppresses these effects effectively, the ideal body contact cannot be achieved to avoided FBE completely due to the presence of resistance in the body region itself.…”

Section: Introductionmentioning

confidence: 99%

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

Jia,

Zhang,

et al. 2023

Micromachines

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In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter gain β0 of the parasitic BJT in NMOS device increase, while decreasing it in a PMOS device. Additionally, irradiation-generated oxide-trap charges in shallow trench isolation (STI) elevate the surface electrostatic potential of the gate above the STI sidewall, thus providing an additional channel from the emitter to the collector. Moreover, these charges may generate parasitic reverse conductive paths at the STI/Si interface under high dose irradiation, thereby enhancing the leakage current in the front gate channel and diminishing the significance of the parasitic BJT. Under irradiation, the electric field intensity difference between two biases leads to higher β0 of the parasitic BJT in PG-biased devices than in ON-biased ones. Furthermore, the lifting effect of irradiation on β0 increases in wide or short channel irradiated devices, which can be explained using simulations and an emitter current crowding effect model.

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“…[12] The detrimental FBEs can be suppressed enough but not eliminated via device modifications, such as H-gate or T-gate structures with body ties. [13] The single transistor latchup (STL) effect, as an extreme case of the FBEs, can finally lead to an abnormally abrupt decrease of the subthreshold slope and the sustainability of high drain current state even at typical operating voltage. [14][15][16][17] TID irradiation induced degradation of SOI devices has been reported by many previous published works.…”

Section: Introductionmentioning

confidence: 99%

Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Fan

Zhang

et al. 2017

Chinese Phys. B

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Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator (PDSOI) NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling (BBT) has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide (BOX) contributes a lot to the latchup effect.

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Using layout technique and direct-tunneling mechanism to promote DC performance of partially depleted SOI devices

Cited by 14 publications

References 11 publications

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

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Using layout technique and direct-tunneling mechanism to promote DC performance of partially depleted SOI devices

Cited by 14 publications

References 11 publications

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

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The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate