Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires

Abstract

ZnO films with a thickness of ~200 nm were deposited on SiO2/Si substrates as the seed layer. Then Zn(NO3)2-6H2O and C6H12N4 containing different concentrations of Eu(NO3)2-6H2O or In(NO3)2-6H2O were used as precursors, and a hydrothermal process was used to synthesize pure ZnO as well as Eu-doped and In-doped ZnO nanowires at different synthesis temperatures. X-ray diffraction (XRD) was used to analyze the crystallization properties of the pure ZnO and the Eu-doped and In-doped ZnO nanowires, and field emission scanning electronic microscopy (FESEM) was used to analyze their surface morphologies. The important novelty in our approach is that the ZnO-based nanowires with different concentrations of Eu3+ and In3+ ions could be easily synthesized using a hydrothermal process. In addition, the effect of different concentrations of Eu3+ and In3+ ions on the physical and optical properties of ZnO-based nanowires was well investigated. FESEM observations found that the undoped ZnO nanowires could be grown at 100 °C. The third novelty is that we could synthesize the Eu-doped and In-doped ZnO nanowires at temperatures lower than 100 °C. The temperatures required to grow the Eu-doped and In-doped ZnO nanowires decreased with increasing concentrations of Eu3+ and In3+ ions. XRD patterns showed that with the addition of Eu3+ (In3+), the diffraction intensity of the (002) peak slightly increased with the concentration of Eu3+ (In3+) ions and reached a maximum at 3 (0.4) at%. We show that the concentrations of Eu3+ and In3+ ions have considerable effects on the synthesis temperatures and photoluminescence properties of Eu3+-doped and In3+-doped ZnO nanowires.

Fabrication of Zinc Oxide and Nanostructured Porous Silicon Composite Micropatterns on Silicon

“…Thin films of ZnO typically show an allowable bandgap transition in the 3 to 3.3 eV (375-410 nm) interval, depending on the film thickness and the specific treatment after deposition [22,23]. In the case of ZnO nanostructures, including ZnO nanowires, nanorods, and nanobelts [9][10][11]24], a blueshift in the emission band of the PL spectra was previously reported, as well as the presence of an additional higher broadband emission centered between 2 and 3 eV [10,11]. Overall, a decrease in the bandgap occurs, which depends on the size and shape of the nanostructure.…”

“…However, in some cases, a blueshift in the position of the emission band or in the presence of another visible blue broadband occurs. In more detail, the reduction in the Eg of ZnO thin films depends on the size of the nanocrystals and their shape [9][10][11].…”

Special Issue on Intelligent Electronic Devices

“…Wei et al reported "Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires" [10]. In this study, ZnO films with a thickness of~200 nm were deposited on SiO 2 /Si substrates as the seed layer.…”

A Novel Synthesis of ZnO Nanoflower Arrays Using a Lift-Off Technique with Different Thicknesses of Al Sacrificial Layers on a Patterned Sapphire Substrate

“…Although there are many methods that have been used to synthesize 1D ZnO nanostructured materials, the hydrothermal method is the most commonly used technology. The hydrothermal method is a simple, useful, and economical way to synthesize 1D ZnO nanostructured materials at low temperatures [16]. ZnO nanoflowers have different outstanding applications in diverse fields beyond themselves.…”