Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors

Sugie, Ryuichi; Uchida, Tomoyuki; Matsumura, Kazunori; Sako, Hideki

doi:10.1007/s11664-020-08111-z

Cited by 5 publications

(4 citation statements)

References 42 publications

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“…Cathodoluminescence (CL) spectroscopy, which uses an electron beam as an excitation source, is especially suitable for defect characterization in Ga 2 O 3 -based devices because the exciting-beam energy exceeds the bandgap energy and its spatial resolution exceeds that of a photoluminescence (PL) microprobe. 20,[34][35][36] In this work, we focused on cross-sectional CL analysis to obtain the depth profiles of point defects in Si-ion-implanted β-Ga 2 O 3 . We carefully optimized the CL experimental conditions, including electron beam energy, cross-cutting sample preparation, and artifacts originating from an aberration of the spectroscopic system to obtain the best spatial resolution and semi-quantitative results.…”

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confidence: 99%

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Sugie¹,

Uchida²,

Hashimoto³

et al. 2020

Appl. Phys. Express

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Low-energy cross-sectional cathodoluminescence (CL) with a beam energy of 1 keV was applied to Si-ion-implanted β-Ga2O3 (−201) wafers to investigate implantation damage and recovery. The semi-quantitative CL-intensity depth profiles were obtained by considering nonradiative recombination at the surface. We found that the CL intensity did not fully recover, even after annealing at 1273 K. Such insufficient recovery was prominent in the Si-diffusion region, suggesting that Si-dopant activation and Si diffusion are strongly correlated through interaction with point defects generated by implantation, such as Si interstitials and Ga vacancies.

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confidence: 99%

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Sugie¹,

Uchida²,

Hashimoto³

et al. 2020

Appl. Phys. Express

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“…1. The detailed mechanism of damage formation in deeper region is not unambiguously identified at this stage; however, the same phenomenon was also observed in silicon carbide (SiC) [18,39] and GaN [20] and mainly explained based on the diffusion and interaction of the mobile Dose 5E13 cm -2 DAP STE point defects. In SiC and GaN, the diffusion coefficients of the dopants are relatively small, and dopants cannot diffuse easily even after high-temperature annealing.…”

Section: Resultsmentioning

confidence: 82%

“…VUV excitation is effective for UWBG semiconductors; however, VUV systems require a special spectrometer and light source, and the operation conditions are only met in a synchrotron radiation beamline. Cathodoluminescence (CL), which uses electron beams, is suitable for defect characterization in UWBG semiconductors because conventional scanning electron microscope (SEM) can be used as the excitation source, and the exciting-beam energy exceeds the bandgap energies of UWBG semiconductors [11,[18][19][20][21][22]. We reported CL analysis on the Si-ion-implanted β-Ga2O3 [22]; however, only a cross-sectional measurement at a dose of 1 × 10 15 cm −2 , which was relatively high dose implantation, are show in in the report.…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga₂O₃

Sugie

Uchida

Hashimoto

et al. 2022

IEEE J. Electron Devices Soc.

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Ion implantation and activation annealing are key processes in the creation of an ideal free carrier distribution in semiconductor devices. Ultra-wide-bandgap (UWBG) semiconductors, such as gallium oxide (Ga2O3) and aluminum nitride (AlN), have many advantages suitable for power-device applications. We implanted silicon (Si) at doses ranging from 1 × 10 11 to 1 × 10 15 cm −2 into β-Ga2O3 (−201) wafers, and annealed them at 800 and 1000 °C in N2 atmosphere. Secondary ion mass spectrometry (SIMS) and cathodoluminescence (CL) were used to evaluate the dopant profile and damage resulting from ion implantation. The CL intensity decreased rapidly with the dose. Even at a dose of 1 × 10 11 cm −2 , the intensity dropped by nearly half of its value for the bare wafer. The CL intensity recovered after annealing at all doses; however, the CL intensity did not fully recover even after annealing at 1000 °C. Moreover, the CL-depth profile at a dose of 1 × 10 15 cm −2 after annealing at 1000 °C showed pronounced intensity decay near the Si-diffused region. The CLintensity decay was strongly correlated with Si diffusion. This phenomenon suggests that high-temperature annealing at high dose not only activates the Si dopant through the interaction of the interstitial Si and Ga vacancies but also causes interstitial Si atoms to diffuse into deeper regions. CL spectroscopy is very sensitive to the implantation damage and can be used for optimization of ion implantation and annealing processes in β-Ga2O3.

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“…[22] In this review, the until then identified PL bands in GaN are described and a detailed summary of their behavior, e.g., dependence on temperature, excitation power density, and doping, is given. Emanating from the importance of C doping for optoelectronic devices and the fact that luminescence methods are more and more often applied for device analysis, [11,[23][24][25][26][27] in this article we focus on the recent progress with respect to understanding the role of C in bulk GaN. Accordingly, we will emphasize the defect-related radiative transitions in the visible spectral region of carbon-doped bulk GaN.…”

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Current Status of Carbon‐Related Defect Luminescence in GaN

Zimmermann

Beyer

Röder

et al. 2021

Physica Status Solidi (a)

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Gallium nitride (GaN) has become an indispensable compound semiconductor due to its numerous applications in opto- [1,2] and microelectronic [3,4] devices. GaN-based light emitting diodes and laser diodes show higher efficiencies than competing materials and, by alloying with Al or In, the bandgap can cover both the visible and UV spectral range. [5] In addition, AlGaN/GaN heterostructures lead to the formation of a 2D electron gas (2DEG) at the AlGaN/GaN interface, which enables high-frequency switching devices. [6,7] Furthermore, due to the large breakdown voltage and thermal stability, GaN is the perfect candidate for high-power applications. [8,9] As a prerequisite for GaN-based power electronic devices, highly insulating buffers are required. [10,11] Here, carbon doping plays a major role to compensate for donor impurities, which occur even in nominally undoped GaN films. However, the role of carbon-related defects in heterojunction field effect transistors is multiple. They were shown to play a major role in the buffer transport mechanisms generally [12] and to contribute to current collapse [13,14] as well as a dynamical shift of the threshold voltage [11,15] in the devices.Advancements in the field of GaN growth resulted in bulk material of improved structural quality, often with dislocation densities below 10 6 cm À2 . [16,17] As a consequence, the influence of point defects as a limiting factor of device performance is gaining importance. [18][19][20] Therefore, a better understanding of point defects in GaN is required to improve device performance further and to control unwanted side effects.To study optically active point defects in semiconductors, photoluminescence (PL) is one of the experimental techniques most frequently used. The impact of carbon on the luminescence properties is, without doubt, one of the most debated subjects related to point defects in GaN. Although those discussions reach back more than 40 years, [21] considerable progress in the understanding of carbon-related point defect levels was made in the last decade.Two main factors greatly improved the understanding of carbon-related defect levels in GaN. On one hand, the implementation of hybrid functionals in density functional theory (DFT) accounts for carrier localization at acceptor species. This led to vast changes in the predicted energy values of charge state

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Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors

Cited by 5 publications

References 42 publications

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga₂O₃

Current Status of Carbon‐Related Defect Luminescence in GaN

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Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors

Cited by 5 publications

References 42 publications

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O3

Current Status of Carbon‐Related Defect Luminescence in GaN

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Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga₂O₃