Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga<sub>2</sub>O<sub>3</sub>

Sugie, Ryuichi; Uchida, Tomoyuki; Hashimoto, Ai; Akahori, Seishi; Matsumura, Kazunori; Tanii, Yoshiharu

doi:10.35848/1882-0786/abca7c

Cited by 7 publications

(6 citation statements)

References 54 publications

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“…The corresponding calculated vacancy profiles peaked at ∼200 nm. Previous work in the literature has shown that SRIM calculations of the depth distribution for Si-implantation in β-Ga2O3 corresponds well with experimental measurements 16,24 .…”

Section: Resultssupporting

confidence: 79%

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Kjeldby

Azarov

Nguyen

et al. 2022

Journal of Applied Physics

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Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-Ga2O3) wafers, having [Formula: see text], (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV 28Si+-ions, applying fluences in the range of 1 × 1014–2 × 1016 Si/cm2, unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted β-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having [Formula: see text] orientation were subjected to isochronal (30 min) anneals in the range of 300–1300 °C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 × 1016 Si/cm2 and annealed at 1100 °C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites.

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Section: Resultssupporting

confidence: 79%

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Kjeldby

Azarov

Nguyen

et al. 2022

Journal of Applied Physics

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“…The blue-band emission around 3.0 eV of β-Ga 2 O 3 was strongly observed, as reported in other literature. 23,27) Notably, the luminescence property of this β-Ga 2 O 3 thin film prepared on the polymer substrate by ELA treatment at RT was close to that of single crystalline β-Ga 2 O 3 .…”

mentioning

confidence: 58%

Fabrication of highly-oriented β-Ga₂O₃ thin film on ZnO/AlO _x -buffered cyclo-olefin polymer substrate by excimer laser annealing at room temperature

Kai

Oga

Watanabe

et al. 2023

Jpn. J. Appl. Phys.

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The fabrication of highly-oriented β-Ga2O3 thin films on cyclo-olefin polymer (COP) substrates with oxide-buffer layers of amorphous AlOx and c-axis-oriented crystalline ZnO by excimer laser annealing at room-temperature (RT) was investigated. An amorphous GaOx thin film deposited on a COP substrate by pulsed laser deposition at RT was irradiated with a pulsed KrF excimer laser from the film surface at RT in air. X-ray diffraction, reflection-high-energy-electron diffraction, and high-resolution transmission-electron microscopy results revealed solid-state crystallization of the uniaxial-oriented β-Ga2O3 ("2" ̅01) thin film on the ZnO/AlOx-buffered COP substrate. The obtained β-Ga2O3 thin film exhibited green-, blue-, and ultraviolet-band cathode-luminescence.

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“…VUV excitation is effective for UWBG semiconductors; however, VUV systems require a special spectrometer and light source, and the operation conditions are only met in a synchrotron radiation beamline. Cathodoluminescence (CL), which uses electron beams, is suitable for defect characterization in UWBG semiconductors because conventional scanning electron microscope (SEM) can be used as the excitation source, and the exciting-beam energy exceeds the bandgap energies of UWBG semiconductors [11,[18][19][20][21][22]. We reported CL analysis on the Si-ion-implanted β-Ga2O3 [22]; however, only a cross-sectional measurement at a dose of 1 × 10 15 cm −2 , which was relatively high dose implantation, are show in in the report.…”

Section: Introductionmentioning

confidence: 99%

“…For the crosssectional CL measurements, we used the cleavage (100) surface instead of mechanically polished faces to avoid processing damage due to cutting. The detailed experimental conditions of the cross-sectional measurements were described in [22].…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga₂O₃

Sugie

Uchida

Hashimoto

et al. 2022

IEEE J. Electron Devices Soc.

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Ion implantation and activation annealing are key processes in the creation of an ideal free carrier distribution in semiconductor devices. Ultra-wide-bandgap (UWBG) semiconductors, such as gallium oxide (Ga2O3) and aluminum nitride (AlN), have many advantages suitable for power-device applications. We implanted silicon (Si) at doses ranging from 1 × 10 11 to 1 × 10 15 cm −2 into β-Ga2O3 (−201) wafers, and annealed them at 800 and 1000 °C in N2 atmosphere. Secondary ion mass spectrometry (SIMS) and cathodoluminescence (CL) were used to evaluate the dopant profile and damage resulting from ion implantation. The CL intensity decreased rapidly with the dose. Even at a dose of 1 × 10 11 cm −2 , the intensity dropped by nearly half of its value for the bare wafer. The CL intensity recovered after annealing at all doses; however, the CL intensity did not fully recover even after annealing at 1000 °C. Moreover, the CL-depth profile at a dose of 1 × 10 15 cm −2 after annealing at 1000 °C showed pronounced intensity decay near the Si-diffused region. The CLintensity decay was strongly correlated with Si diffusion. This phenomenon suggests that high-temperature annealing at high dose not only activates the Si dopant through the interaction of the interstitial Si and Ga vacancies but also causes interstitial Si atoms to diffuse into deeper regions. CL spectroscopy is very sensitive to the implantation damage and can be used for optimization of ion implantation and annealing processes in β-Ga2O3.

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Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Cited by 7 publications

References 54 publications

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Fabrication of highly-oriented β-Ga₂O₃ thin film on ZnO/AlO _x -buffered cyclo-olefin polymer substrate by excimer laser annealing at room temperature

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga₂O₃

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Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3

Cited by 7 publications

References 54 publications

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Fabrication of highly-oriented β-Ga2O3 thin film on ZnO/AlO x -buffered cyclo-olefin polymer substrate by excimer laser annealing at room temperature

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O3

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Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga₂O₃

Fabrication of highly-oriented β-Ga₂O₃ thin film on ZnO/AlO _x -buffered cyclo-olefin polymer substrate by excimer laser annealing at room temperature

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga₂O₃