User- Friendly Compact Model of Magnetic Tunnel Junctions for Circuit Simulation Based on Switching Probability

Liu, Haoyan; Ohsawa, Takashi

doi:10.1109/vlsi-dat.2019.8741646

Cited by 4 publications

(5 citation statements)

References 15 publications

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“…Figure 4 (A) shows a spin-transfer torque (STT) MTJ structure [23], [24], [25]. An MTJ consists of a free layer, a barrier layer, and a pinned layer.…”

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

“…Here, we introduce critical current, which significantly affects MTJ switching probability models. The critical current of an MTJ depends on the state of the MTJ [25], [27] . The following equations define the critical current on the P state (I c P→AP ) and the critical current on the AP state (I c AP→P ).…”

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

“…Various models of the MTJ's switching probability have been proposed [25], [26], [30], [31], [32], [33], [34], [35]. Depending on the critical current value (I c ), MTJ's switching probability models can be divided into three switchings: thermal activation switching (I < I c ) [26], [32], dynamic reversal switching (I ≃ I c ) [30], and precessional switching (I > I c ) [26].…”

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

“…where t is current driving duration, τ 0 is attempt time (typically 1 ns), E b is energy barrier, k b is Boltzmann constant, T is temperature, I is driving current, I c is critical current, V is voltage, R MT J is the MTJ's resistance, and ν is an exponent depending on anisotropy (1 <= ν <= 2) [26]. The value of I c depends on the MTJ's state [25], [27] as well as R MT J . Note that the MTJ state transition probability formula in thermal activation switching shows that MTJ state transitions can occur even if the driving current is smaller than the critical current.…”

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

See 3 more Smart Citations

A Learning-based Control Scheme for MTJ-based Non-volatile Flip-Flops

Nakabeppu,

Yamasaki

2024

IPSJ Transactions on System LSI Design Methodology

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A magnetic tunnel junction (MTJ) based non-volatile flip-flop (NVFF) is attractive for non-volatile power gating to reduce power consumption and for non-volatile checkpointing to improve fault tolerance. An MTJ-based NVFF can perform a store operation to write the slave latch value to the MTJs, non-volatile devices, and a restore operation to write the MTJs value to the slave latch. However, a store operation is a stochastic operation. The store operations' success rate depends on their duration, NVFF characteristics, voltage, and temperature. Their success rate changes statically because each NVFF has different characteristics due to process variation in actual chips. Their success rate changes dynamically because voltage and temperature change dynamically depending on operating environments. Our goal is to reduce the checkpoint creation's energy consumption while ensuring its success. We propose a learning-based hardware scheme that dynamically finds the appropriate parameters to achieve our goal. The proposed scheme consists of a machine-learning unit and an exploration unit. The machine-learning unit learns and predicts the store operations' success rate by inputting their duration, voltage, and temperature. The exploration unit explores the trained machine-learning unit to find the appropriate parameters. The evaluation shows that the proposed scheme could achieve our goal.

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“…Figure 4 (A) shows a spin-transfer torque (STT) MTJ structure [23], [24], [25]. An MTJ consists of a free layer, a barrier layer, and a pinned layer.…”

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

Section: Switching Probability Of An Mtjmentioning

confidence: 99%

See 2 more Smart Citations

A Learning-based Control Scheme for MTJ-based Non-volatile Flip-Flops

Nakabeppu,

Yamasaki

2024

IPSJ Transactions on System LSI Design Methodology

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show abstract

“…Modeling of MTJ has been grown rapidly since then, and there are various other models reported in the last decades [120,[172][173][174][175][176][177][178][179][180]. In 2007, the SPINTEC library reported C compiled MTJ model (but models were not published), which was verified using the Cadence Spectre simulator.…”

Section: A Brief History Of Mtj Device Modelingmentioning

confidence: 99%

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

et al. 2020

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Spintronics is one of the growing research areas which has the capability to overcome the issues of static power dissipation and volatility suffered by the complementary metal-oxide-semiconductor (CMOS) industry. Magnetic tunnel junction (MTJ), one of the prominent spintronic devices, is not only used to develop the fully non-volatile-logic (NV-L) but combines magnetism and electronics to develop next-generation NVmemory (NV-M) and hybrid CMOS/MTJ circuits. To be specific towards hybrid CMOS/MTJ circuits, the fabrication of first hybrid full-adder in 2009, fabrication of MTJ based 240-tile NV-field programmable gate array (NV-FPGA) chip in 2013, fabrication of a 3000-6-input-LUTs based NV-FPGA chip in 2015, fabrication of MTJ based NV-logic-in-memory-large scale integration (NV-LIM-LSI) in 2017 and recently the fabrication of a full hybrid magnetic/CMOS System on Chip (SoC) under EU GREAT Project in 2019 has strengthened the belief and motivated the researcher to be continued in this domain. This review article aims to provide the complete design flow of hybrid CMOS/MTJ circuits developed using one of the fab compatible MTJ spintronic devices and its integration with conventional CMOS logic. The broad coverage of the article is MTJ construction, its switching mechanisms, a brief history of various compact models, reliability issues, and the concept of logic-in-memory (LIM) architecture. Finally, the article concludes with the challenges and future prospects of hybrid CMOS/MTJ circuits, which will motivate people in academia to cultivate research in this domain and industry to realize the prototype for a wide range of potential applications.

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A General-Purpose STT-MTJ Device Model Based on the Fokker-Planck Equation

Liu,

Ohsawa

2023

IEEE Trans. Nanotechnology

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User- Friendly Compact Model of Magnetic Tunnel Junctions for Circuit Simulation Based on Switching Probability

Cited by 4 publications

References 15 publications

A Learning-based Control Scheme for MTJ-based Non-volatile Flip-Flops

A Learning-based Control Scheme for MTJ-based Non-volatile Flip-Flops

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

A General-Purpose STT-MTJ Device Model Based on the Fokker-Planck Equation

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