Usefulness of VeSTIC devices for low-noise and radiation hard 3D integrated circuits

Staniewski, Michal; Pfitzner, Andrzej

doi:10.1109/mixdes.2014.6872217

Cited by 3 publications

(1 citation statement)

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“…The first prototype wafer did not contain bipolar transistors, and it was used for experiments with unipolar junction field effect transistor VES-JFET [24], as well as for measurements of basic parameters such as resistances, capacitances, etc. The second wafer contained p-n-p bipolar transistors.…”

Section: Measurementsmentioning

confidence: 99%

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Mierzwinski

Kuźmicz

2023

Electronics

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This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. However, the basic VESTIC cell can be used not only to make field effect transistors but also to make bipolar transistors. Their structures differ in many ways from existing structures of bipolar transistors. The investigations reported here aim to answer the question: can VESTIC-based lateral bipolar transistors be useful as active devices, and can they be made technologically compatible with field effect VESTIC devices? The theoretical studies were followed by the fabrication and measurements of VESTIC-based p-n-p and n-p-n bipolar devices. Although the manufacturing technology available was far from optimal, working bipolar devices were obtained. The results show that VESTIC-based bipolar devices may achieve acceptable parameters if made with state-of-the-art manufacturing technology. The main outcome of the research reported in the paper is that p-n-p and n-p-n bipolar transistors with acceptable parameters may be fabricated, together with field effect devices, in VESTIC-based integrated circuits. As a result, the VESTIC technology could become the new original BiCMOS technology.

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Section: Measurementsmentioning

confidence: 99%