Abstract:The aim of this work is to study the physical obstacles introduced by the use of high-k MOSFETs structures and discuss basic problems associated with high-k candidates currently investigated such as low carrier mobility and parasitic interfacial layers and to present other ways to reduce the undesirable secondary effects when one replaces silicon with a high dielectric oxyde (high-k). We will show that use of the nitride allows reducing the effects of the interfacial layers with an acceptable reduction rate of… Show more
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