Use of Surface-Barrier Photodiodes as Fast-Response Photocapacitors

A Photoresponsive Red‐Hair‐Inspired Polydopamine‐Based Copolymer for Hybrid Photocapacitive Sensors

“…The MIS device confi guration on pSi with pDA, pCDA and p(DA/CDA) as 'insulating' and optically active layers was instead adopted in order to check the MIS photocapacitive effect when the device is exposed to white light under depletion conditions. [6][7][8][9] The Figure 7 compares the C-V (7a) and G-V (7b) hysteresis loops read outs at 1 MHZ of the full set of pDA and p(DA/CDA)-based MIS devices collected in dark. The selected high frequency of the AC voltage signal allowed to avoid any infl uence of the interface state charges on the measured impedance.…”

CdS based novel photo-impedance light sensor

“…Photocapacitive sensors, which change their capacitance upon illumination, are suitable candidates for such operation. They can be employed in the tank circuit of an RF oscillator generating a wireless frequency-modulated signal in response to intensity modulation of incident light [1][2][3][4][5]. Schottky barrier diodes [1,2,4], PIN diodes [6], and MOS capacitor structures [7][8][9][10] have been used as photocapacitive sensors, where either the depletion capacitance or the MOS capacitance is changed under illumination.…”

“…They can be employed in the tank circuit of an RF oscillator generating a wireless frequency-modulated signal in response to intensity modulation of incident light [1][2][3][4][5]. Schottky barrier diodes [1,2,4], PIN diodes [6], and MOS capacitor structures [7][8][9][10] have been used as photocapacitive sensors, where either the depletion capacitance or the MOS capacitance is changed under illumination. Different semiconductors ranging from Si [4,[7][8][9][10] to GaAs [3] and, more recently, GaN [1] and AlGaN [2] have been employed in these photocapacitors.…”

“…Schottky barrier diodes [1,2,4], PIN diodes [6], and MOS capacitor structures [7][8][9][10] have been used as photocapacitive sensors, where either the depletion capacitance or the MOS capacitance is changed under illumination. Different semiconductors ranging from Si [4,[7][8][9][10] to GaAs [3] and, more recently, GaN [1] and AlGaN [2] have been employed in these photocapacitors. Organic materials with dielectric constant dependent on illumination have also been used in photocapacitive structures [11].…”