CdS based novel photo-impedance light sensor

Saxena, Tanuj; Rumyantsev, Sergey; Dutta, P.S.; Shur, M. S.

doi:10.1088/0268-1242/29/2/025002

Cited by 18 publications

(7 citation statements)

References 10 publications

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“…But is a function of the luminous intensity received by LDR, as shown in Figure 1 and revealed by [11]…”

Section: Figure 1 the Physical Model Of The Proposed Devicementioning

confidence: 91%

“…where 0 is LDR dark resistance, and are constants [11] and their values depend on the colour of the light received by the LDR. In Equation ( 4), is measured in / 2 [11]; therefore, the equation can be recast as…”

Section: Figure 1 the Physical Model Of The Proposed Devicementioning

confidence: 99%

“…The plot of against using parameters provided in [11] for different colours of light received by LDRs is presented in Figure 5; which reveals that the quantity of lux received by the LDR determines .…”

Section: Figure 1 the Physical Model Of The Proposed Devicementioning

confidence: 99%

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Modeling of A LDR Based Liquid Level Detecting Device Using Power Function

Salawu¹,

Adetona²

2021

ETRJ

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All vehicles require liquid to move from one point to the other; and it is necessary for the driver of the vehicle to ascertain the volume (level) of the liquid in the tank before setting out on a journey, hence the need to know the level of the liquid in the tank. This paper therefore presents modeling and simulation of a sensory device, which evaluates the volume VLQD of any type of liquid in any type of a closed container that has a cross-sectional area A (m2) and height h (m). The main attraction of the approach is that it does not get in touch with the liquid, its simplicity and lower cost. The aim is achieved by using a sensor, Light Dependent Resistor (LDR); which operates on a principle which states that the voltage ELUX in Volts across a LDR is a function of luminance it receives from a light source, Light Emitting Diode (LED). This principle and a power function developed using experimental data were used to model VLQD; which reveals that VLQD in litres is a function of ELUX in Volts. The model of VLQD was simulated for the sake of validation in the Proteus 8.9 professional environment. The results obtained revealed that the proposed model correctly indicated the VLQD in litres in a closed container that its A (m2) and h (m) are known and specified in the model.

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“…But is a function of the luminous intensity received by LDR, as shown in Figure 1 and revealed by [11]…”

Section: Figure 1 the Physical Model Of The Proposed Devicementioning

confidence: 91%

Section: Figure 1 the Physical Model Of The Proposed Devicementioning

confidence: 99%

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Modeling of A LDR Based Liquid Level Detecting Device Using Power Function

Salawu¹,

Adetona²

2021

ETRJ

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“…This sensor design consists of two or more fixed capacitances connected by the light and frequency sensitive elements. We have demonstrated such a concept using a cadmium sulfide device [6]. In this report, we present the simulation results for a related but different structure implemented in silicon.…”

Section: Introductionmentioning

confidence: 99%

Tunable and Wireless Photoimpedance Light Sensor

et al. 2014

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We report on the effects of the frequency dispersion in light sensitive materials used in photoimpedance wireless sensors. An example of such a sensor is a gated semiconductor connecting two or more fixed capacitances. The impedance of the device under illumination is changed by the change in the photoresistance of the semiconductor layer and the change in the gate-semiconductor capacitance. We report on the design and simulation of the frequency dispersion of the impedance of this device in silicon and discuss the physics and device performance. We also evaluate the dynamic range and sensitivity of the wireless photoimpedance sensors and show their advantages for wireless sensing applications compared to more conventional light sensors.

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“…The important parameters characterizing optically tunable varactor are the sensitivity and spectral response and to a somewhat a lesser extent the quality factor (since a fast response, while desirable, is often not crucial in sensing applications). Examples for optically tunable varactors include a AlGaAs/GaAs hetero structure and two planar Schottky contacts [3][4][5][6] (where illumination at 850 nm changes the depletion capacitance), a silicon metal-oxide-semiconductor (MOS) capacitor 7 and a CdS photo-impedance sensor 8 both sensitive in visible range of the wavelength, GaN 9 and AlGaN 10 on sapphire with interdigitated electrodes which are sensitive only in a narrow wavelength from 280 nm to 375 nm. The various optically sensitive varactors differ from each other in their sensitivity and spectral responses, the quality factor, and the ease of fabrication.…”

mentioning

confidence: 99%

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

Mikhelashvili

Cristea

Meyler

et al. 2015

Journal of Applied Physics

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Articles you may be interested inA highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-oninsulator substrate J. Appl. Phys. 116, 074513 (2014); 10.1063/1.4893582 Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metalinsulator-semiconductor structures under forward gate bias stress Appl. Phys. Lett. 105, 033512 (2014); 10.1063/1.4891532Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO 2 ∕ HfO 2 -Al 2 O 3 nanolaminate ∕ Al 2 O 3We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO 2 -HfO 2 . Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm-880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible. V C 2015 AIP Publishing LLC. [http://dx.

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CdS based novel photo-impedance light sensor

Cited by 18 publications

References 10 publications

Modeling of A LDR Based Liquid Level Detecting Device Using Power Function

Modeling of A LDR Based Liquid Level Detecting Device Using Power Function

Tunable and Wireless Photoimpedance Light Sensor

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

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