Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

Abstract

Articles you may be interested inA highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-oninsulator substrate J. Appl. Phys. 116, 074513 (2014); 10.1063/1.4893582 Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metalinsulator-semiconductor structures under forward gate bias stress Appl. Phys. Lett. 105, 033512 (2014); 10.1063/1.4891532Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO 2 ∕ HfO 2 -Al 2 O 3 nanolaminate ∕ Al 2 O 3We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO 2 -HfO 2 . Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm-880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible. V C 2015 AIP Publishing LLC. [http://dx.

Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films

“…Under visible light illumination, it exhibits negligible light wavelength dependence but strong light intensity dependence on flat-band voltage shift |ΔV FB |. Moreover, its endurance/retention properties are better than what have been reported for similar memory cells [15][16][17][18], showing potential applications on new-type optically triggered NFG-NVM memory devices working in the visible light region.…”

“…In the past ten years, many reports have discussed photoassisted charge storage properties of organic NFG-NVM devices [12,13] and photo-generated changes of capacitance-voltage (C-V) characteristics for MOS photodetector [14] under visible light illumination. For inorganic Si-based NFG-NVM devices, Mikhelashvili et al [15][16][17][18][19] have systematically discussed optically tunable capacitance and photocurrent response of NFG-NVM memory devices based on HfO 2 /SiO 2 films embedded with/without different metal nanoparticles (Pt, Au, Fe, etc). In this article, we have studied the photosensitivity of a NFG-NVM memory cell with amorphous Ni-doped HfO 2 film as charge storage layer.…”

Selective Deposition of Platinum by Atomic Layer Deposition Using Terraced Oxide Surfaces

“…An example of such surfaces can be found in α-Al 2 O 3 (sapphire), a material that presents a low-to-negligible energetic contrast between facets that might well be thermodynamically stable. Achievement of selective ALD free of surface modifications upon oxide surfaces could be attractive for catalytic, , electronic, , and plasmonic − devices. This is in place of using either the various chemical modifications currently offered by conventional lithography or the alternative self-assembled monolayers (SAMs)-based methods offered by current studies in the field of area-selective ALD.…”

Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

“…Different optically sensitive varactors have been demonstrated including a planar metal-semiconductor-metal (MSM) diode based on an AlGaAs/GaAs heterostructure [5][6][7] and MIS capacitors fabricated on either bulk silicon or silicon on insulator substrates. [8][9][10] A photo-impedance sensor comprising photoresistive and photocapacitive sections was constructed on a crystalline CdS substrate, and an optically tunable lowpass filter based on an MIM capacitor made use of polymer CdS as the insulator. 2,11 Some of the reported devices exhibit a large capacitance photosensitivity but their voltage dependence is highly nonlinear; a fact that limits their application as precision capacitors in different filter circuits and in RF analog mixed signal (RF/AMS) applications.…”