Use of sputtering and negative carbon ion sources to prepare carbon nitride films

Based on experimental observations it is known that various biological cells exhibit a persistent random walk during migration on flat substrates. The persistent random walk is characterized by 'stop-and-go' movements: unidirectional motions over distances of the order of several cell diameter are separated by localized short time erratic movements. Using computer simulations the reasons for this phenomena had been unveiled and shown to be attributed to two antagonistic nucleation processes during the polymerization of the cell's actin cytoskeleton: the (ordinary) spontaneous nucleation and the dendritic nucleation processes. Whereas spontaneous nucleations generate actin filaments growing in different directions and hence create motions in random directions, dendritic nucleations provide a unidirectional growth. Since dendritic growth exhibits stochastic fluctuations, spontaneous nucleation may eventually compete or even dominate, which results in a reorientation of filament growth and hence a new direction of cell motion. The event of reorientation takes place at instants of vanishing polarity of the actin skeleton.

Section: Resultsmentioning

confidence: 99%

Isobutane/N₂ Pulsed Radio Frequency Magnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films for Field Emission Applications

Kinoshita¹,

Tanaka²

2012

“…The double peak observed at 2335 cm À1 was due to the CO 2 stretching mode. 20) This CO 2 absorption was caused by CO 2 gas in the atmosphere. The absorption intensity of the CO 2 peak depended on conditions in the atmosphere and in the FTIR apparatus during each operation.…”

Section: Resultsmentioning

confidence: 99%

Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films

Kinoshita

Yamaguchi

2010

The design, construction and operation of a compact, high-efficiency Bragg diffraction spectrometer are described. An accurate method of alignment is presented. The spectrometer has been tested with a lead stearate analysing crystal by measuring carbon K (methane) and argon L x-ray energies produced by direct electron beam excitation. The high efficiency of this apparatus is demonstrated by measuring satellite lines of the neon K spectrum with a RbAP analysing crystal.

“…This broad peak can be deconvoluted into two lines: D and G bands. The G band is responsible for the graphitic phase (in-plane vibrations of aromatic layers) and the D band for the disordered carbon networks [17][18][19][20] such as the distort graphitic phase due to the finite size of graphite crystallites. The G band represents a relatively high content of sp 2 -hybridized carbon in the deposited thin films while the D band represents mainly sp 2 -hybridized carbon with a small amount of sp 3 -hybridized carbon.…”

Section: Methodsmentioning

confidence: 99%

Raman Spectroscopy Studies of the Influence of Substrate Temperature and Ion Beam Energy on CN_x Thin Films Deposited by Nitrogen-Ion-Assisted Pulsed Laser Deposition

Ren¹,

Lu²,

Ho³

et al. 1999

Carbon nitride thin films were deposited by nitrogen-ion-assisted pulsed laser ablation of graphite. A KrF excimer laser with pulse duration of 23 ns and wavelength of 248 nm was used as the laser source for the ablation. Raman spectroscopy measurements were used to characterise the deposited thin films. The influences of substrate temperature and nitrogen ion beam energy on the electronic properties of the deposited thin films were studied. The suitable parameters of substrate temperature and ion energy were suggested given our deposition conditions and setup in order to obtain large graphite-like crystallite structures or to realize a high content of amorphous CN x . X-ray photoelectron spectroscopy (XPS) was also adopted to assist the characterisation and evaluation of the deposited CN x thin films.