Use of selective annealing for growing very large grain silicon on insulator films

Colinge, Jean–Pierre; Demoulin, E.; Bensahel, D.; Auvert, G.

doi:10.1063/1.93507

Cited by 94 publications

(11 citation statements)

References 8 publications

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“…In fact, the polycrystalline silicon transistor industry relies on laser annealing techniques. Knowledge accumulated in the past with continuous wave lasers such as crystallization of a patterned semiconductor layer [25], the use of a patterned anti-reflection layer [26], and a heat-sink structure [27] might be applicable for efficient and precise temperature control of organic films. In the late 80s and 90s, the history of laser crystallization repeated itself with an excimer laser [28] with a twist of an interference of laser light [29].…”

Section: Disucussionmentioning

confidence: 99%

Lateral solidification of a liquid crystalline semiconductor film induced by temperature gradient

et al. 2013

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Derivatives of [1]benzothieno[3,2-b]benzothiophene (BTBT) are attracting much attention as a highly soluble, highmobility semiconductor material for thin-film transistor applications. These small molecules are known to organize themselves into a single crystalline structure after spin coating or drop casting. Charge transport in a single crystal material is anisotropic in nature. Hence, it is desired to control its orientation during growth or recrystallization so that the source and drain electrodes of a transistor are to be placed along a faster transport direction. We propose to generate temperature gradient in a heated liquid crystalline thin film to induce lateral recrystallization. In experiment, we tried two methods. First, an aluminum plate with two narrow ridges was inserted between a temperature-controlled stage and a square silicon substrate with a 200nm-thick SiO 2 and a spin-coated C 8 -BTBT film. We raised the temperature of the stage to C 120 o and let it cool gradually. During cooling at around C 105 o , the color of the sample started to change, indicating a phase change. This change proceeded from the corners of the film and in about 30 seconds, darker regions merged at the center of the substrate. Second, the sample was placed at the edge of the stage. In this case, the color change started from the protruding corner of the sample and proceeded toward the other end. Micrograph observation revealed that cracks were formed in these films and they were perpendicular to the direction of the phase change.

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Section: Disucussionmentioning

confidence: 99%

Lateral solidification of a liquid crystalline semiconductor film induced by temperature gradient

et al. 2013

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“…In order to obtain single-crystalline silicon on a complicated device structure, we have improved the selective laser recrystallization technique [4] and fabricated the vertically integrated MOS devices with double-level active layers [ 5 ] .…”

Section: Introductionmentioning

confidence: 99%

SOI/SOI/Bulk-Si triple-level structure for three-dimensional devices

Sugahara

Nishimura

Kusunoki

et al. 1986

IEEE Electron Device Lett.

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The fabrication procedure of the SOI/SOI/bulk-Si triplelevel structure is developed by using the improved selective laser recrystallization technique and MOS LSI technology. The enlarged crystal stripes sandwiched by straight grain boundaries are produced on the planarized insulating film which overlies the device structure in bulkSi, and also SOUbulk-Si double-layered structure. The basic characteristics of MOSFET's in a triple-level structure are evaluated.

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“…5). First results on this method date back to the late 1970ies (Gat et al, 1978;Colinge et al, 1982). At these times laser crystallization was performed for applications in microelectronics.…”

Section: Laser Crystallization For Seed Preparationmentioning

confidence: 99%