2003
DOI: 10.1016/s0022-3697(03)00146-x
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Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 thin films by selenization of metal precursors

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Cited by 24 publications
(24 citation statements)
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“…The precursors were selenized using DESe for 90 min at atmospheric pressure. The details of the selenization equipment have been described in our previous report [13]. The selenization temperature and N 2 carrier gas flow rate were 515°C and 2 L/min, respectively.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The precursors were selenized using DESe for 90 min at atmospheric pressure. The details of the selenization equipment have been described in our previous report [13]. The selenization temperature and N 2 carrier gas flow rate were 515°C and 2 L/min, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…As an alternative to these Se precursors, the authors have proposed the use of diethylselenide [(C 2 H 5 ) 2 Se: DESe] as a Se source for the selenization growth, and obtained densely-packed, singlephase, adhesive polycrystalline CIS films [12,13]. Since DESe is a metalorganic liquid at room temperature and is stored in atmospheric-pressure stainless-steel cylinders, the danger of widespread leakage is less likely compared with H 2 Se.…”
Section: Introductionmentioning
confidence: 99%
“…As of now, CIGSS/CdS thin film solar cells are being prepared by rapid thermal processing and conventional selenization using diethylselenide (DESe) as selenium source [6,7] and H S as sulfur source [8], in combination with DC/RF magnetron sputtering and chemical bath deposition technique. Sulfurization of metallic precursors is a well-developed process to produce a high bandgap (1.55eV) absorber.…”
Section: List Of Figuresmentioning
confidence: 99%
“…The authors have proposed the use of a less hazardous metalorganic selenide, diethylselenide [(C 2 H 5 ) 2 Se: DESe], for growing CIGS films by the selenization method [17][18][19][20]. Since DESe decomposes into atomic Se more easily than H 2 Se gas or Se vapor (the bond strength of Se−C 2 H 5 (243 kJ/mol) is weaker than that of H−Se (276 kJ/mol) or Se = Se (332 kJ/mol) [21,22] ), reaction rates capable for forming CIS and CGS can be expected.…”
mentioning
confidence: 99%
“…The supplying rates of DESe and the flow rates of N 2 carrier gas were 35 μmol/min and 2 L/min, respectively. The details of the selenization equipment have been described in our previous reports [18][19][20].…”
mentioning
confidence: 99%