Use of a silicon drift detector for cathodoluminescence detection

Béranger, M.

doi:10.1016/j.microrel.2015.06.067

Cited by 2 publications

(3 citation statements)

References 7 publications

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“…For a sample which is insensitive to the electron beam, the size of the acquisition area should not have any effect on the low energy peak count rate. It is the case for the Gadox sample and for the CsI:Tl sample A, down to 10 µm (figures 11,12,13). For sample A at 2.5 µm and for sample B, it is clearly observed that the slope of the count rate curve is lower for smaller acquisition areas and that the maximum occurs at a higher probe current.…”

Section: Size Of the Acquisition Areamentioning

confidence: 85%

“…The exponential term K is proportional to the quantity of emitted light [12]. The major problem of the analyst is to find the good probe current range for its analysis.…”

Section: Filament and Probe Currentmentioning

confidence: 99%

“…The throughput count rate of this peak varies exponentially with the probe current of the SEM. The behavior of a silicon drift detector (SDD) is somewhat different [12]. The count rate increases first with the probe current, then reaches a maximum and decreases.…”

Section: Introductionmentioning

confidence: 99%

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Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials

Béranger¹

2019

AJPA

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Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.

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Section: Size Of the Acquisition Areamentioning

confidence: 85%

“…The exponential term K is proportional to the quantity of emitted light [12]. The major problem of the analyst is to find the good probe current range for its analysis.…”

Section: Filament and Probe Currentmentioning

confidence: 99%