2021
DOI: 10.1103/physrevmaterials.5.024206
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Unveiling the spin-to-charge current conversion signal in the topological insulator Bi2Se3 by means of spin pumping experiments

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Cited by 17 publications
(5 citation statements)
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“…For sample POST ANN-IL we obtain λ IEE = 0.27 nm, which is in perfect agreement with the value obtained in Au/Co/Au/Sb 2 Te 3 , [4] thus demonstrating the intrinsic role played by Sb 2 Te 3 and its preserved TSS to origin such a large S2C. When compared to other 2 nd class chalcogenide-based TI, [26,[37][38][39][48][49][50][51][52][53][54] the extracted λ IEE is comparable to the highest reported so far.…”
Section: Broadband Fmr Andsupporting
confidence: 88%
“…For sample POST ANN-IL we obtain λ IEE = 0.27 nm, which is in perfect agreement with the value obtained in Au/Co/Au/Sb 2 Te 3 , [4] thus demonstrating the intrinsic role played by Sb 2 Te 3 and its preserved TSS to origin such a large S2C. When compared to other 2 nd class chalcogenide-based TI, [26,[37][38][39][48][49][50][51][52][53][54] the extracted λ IEE is comparable to the highest reported so far.…”
Section: Broadband Fmr Andsupporting
confidence: 88%
“…Recent works have discussed the influence of grain size and grain boundaries in the S2C conversion in Bi 2 Se 3 ‐based heterostructures as probed by SP‐FMR. [ 17,32,69,83 ] Interestingly, the granular Bi 2 Se 3 has been shown to be more efficient in terms of S2C conversion, with a λ IEE being three times higher than in crystalline Bi 2 Se 3 . [ 17 ] As shown by transmission electron microscopy, even though our optimized Sb 2 Te 3 layers develop an epitaxial nature character, several grain boundaries are still present.…”
Section: Resultsmentioning
confidence: 99%
“…Clear guiding principles need to be established to design materials with desired GSS. As a result, it becomes essential to thoroughly characterize and understand spin splitting in novel cases, such as on van der Waals (vdW) heterostructures, 3,52,54,60,64,73 topological insulators, 17,74,75 and Janus-type 2D materials. 61,63,70,72 Additionally, structural modification of these novel platforms must be considered to unlock their full potential for spintronics applications.…”
Section: What a Chemist Ought To Do?mentioning
confidence: 99%
“…The fulfillment of these requisites holds promise for the advancement of spintronics in semiconductor devices, generating significant interest in materials exhibiting giant spin splitting (GSS). However, while Rashba-like physics is currently thriving among condensed matter physicists, 15–19 who are extensively studying non-equilibrium mechanisms like spin-to-charge conversion and nonlinear transport effects, chemists and material scientists often encounter difficulties in predicting the effects of structural functionalization or when describing the mechanisms behind the induced spin splitting. This poses a pertinent challenge for the development of spintronics due to an ever-growing demand for a comprehensive understanding linking the chemical modification of surfaces with the underlying physics, evident from the continuously increasing number of studies focusing on material modification for GSS modulation.…”
Section: Why Do We Care?mentioning
confidence: 99%