Unveiling atomic structure and chemical composition of the Al/AlOx/Al Josephson junctions in qubits

Low voltage-driven, high-performance TiO2 thin film transistors with MHz switching speed

“…Another layer of Al 2 O 3 (∼8 nm) was chosen as the insulating oxide due to its excellent lm quality and large bandgap. [18][19][20] Fig. 1b illustrates the corresponding cross-section view, where Al was selected as the contact metal since a good ohmic contact can be formed between Al and TiO 2 without annealing, while Pt is used as a capping layer to prevent the Al layer from oxidization.…”