Low voltage-driven, high-performance TiO₂ thin film transistors with MHz switching speed

Abstract

CMOS-compatible TiO2 transistors with on–off ratios of 107, a subthreshold swing of ∼150 mV Dec−1 averaged over four orders of magnitude, and excellent gate-pulse switching at 1.0 Hz to 1.0 MHz to be used as logic gates with a voltage gain of 4.8.