Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone

Abstract

Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone Klesko, Joseph P.; Bellow, James A.; Saly, Mark J.; Winter, Charles H.; Julin, Jaakko; Sajavaara, Timo Klesko, J. P., Bellow, J. A., Saly, M. J., Winter, C. H., Julin, J., & Sajavaara, T. (2016 C. The growth rate for the cobalt borate process was 0.39-0.42 Å /cycle at 325 C. X-ray diffraction of the as-deposited films indicated that they were amorphous. Atomic force microscopy of 35-36 nm thick manganese borate films grown within the 300-350 C ALD window showed root mean square surface roughnesses of 0.4-0.6 nm. Film stoichiometries were assessed by x-ray photoelectron spectroscopy and time of flight-elastic recoil detection analysis. The differing film stoichiometries obtained from the very similar precursors MnTp 2 and CoTp 2 are proposed to arise from the oxidizing ability of the intermediate high valent manganese oxide layers and lack thereof for cobalt.