2018
DOI: 10.1016/j.cossms.2018.09.001
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Crystallization of amorphous complex oxides: New geometries and new compositions via solid phase epitaxy

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Cited by 25 publications
(24 citation statements)
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“…As already mentioned, the observed recrystallization of amorphous PCMO resembles SPE of an amorphous Si which happens via a moving amorphous/crystalline interface, where velocities of a few nm per min requires elevated temperatures above 500 • C [33]. The recrystallization temperature can be significantly reduced to around 200-300 • C, if the recrystallization is assisted by ion irradiation [34]. Although the electron-beam induced recrystallization reported here also happens via the movement of the crystalline/amorphous interface, it however strongly differs from the SPE.…”
Section: Discussionmentioning
confidence: 67%
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“…As already mentioned, the observed recrystallization of amorphous PCMO resembles SPE of an amorphous Si which happens via a moving amorphous/crystalline interface, where velocities of a few nm per min requires elevated temperatures above 500 • C [33]. The recrystallization temperature can be significantly reduced to around 200-300 • C, if the recrystallization is assisted by ion irradiation [34]. Although the electron-beam induced recrystallization reported here also happens via the movement of the crystalline/amorphous interface, it however strongly differs from the SPE.…”
Section: Discussionmentioning
confidence: 67%
“…This will be discussed in detail further down. Thus, the process resembles the so-called solid phase epitaxial (SPE) growth, where an initially amorphous Si [33] or complex oxide [34] thin film is epitaxially recrystallized on a crystalline template at elevated temperatures. Remarkably, the electron-beam-induced SPE process in our environmental TEM study is observed at room temperature and depends on a reactive gas environment.…”
Section: Resultsmentioning
confidence: 99%
“…Amorphous oxide layers are not subjected to the constraints imposed by epitaxial synthesis, thereby creating novel pathways to synthesize hybrid functional materials on new substrates and with postassembly tunability of the geometry. [21] Here we show that SrTiO 3 /Si/Si 1−x Ge x NMs form rolledup tubes with sub-micrometer diameters that are determined by the large stresses arising from structural reconfiguration in the amorphous oxide. SrTiO 3 /Si/Si 1−x Ge x NMs roll up into micrometer-scale diameter tubes upon release from the growth substrate due to the elastic relaxation of stress from two sources: the epitaxial mismatch of Si 1−x Ge x and Si, and stress in the as-deposited amorphous SrTiO 3 .…”
Section: Introductionmentioning
confidence: 74%
“…Dramatic changes in the atomic configuration accompany interface formation, the relaxation of glassy states, and crystallization. [21,22] The bonding in amorphous form is incomplete yielding stress that varies during reconfiguration and relaxation. [23][24][25][26][27] Rolled-up NMs may serve as probes to measure film stress evolution during the structural transformation of complex oxides and provide insight into the fundamental mechanisms involved in such structural transformation.…”
Section: Introductionmentioning
confidence: 99%
“…[ 9–14 ] On one hand, crystallization of complex oxides, in general, has associated kinetic barriers from the slow diffusion in solids. [ 15 ] When there are two metal cations involved in crystallization of complex oxides like ABO 3 , their nonuniform distribution can result in spontaneous phase separation to form simple oxides. [ 16 ] A delicate balance of their sol–gel rates and the precautious control of thermal annealing procedure is needed.…”
Section: Introductionmentioning
confidence: 99%