Unstable equilibrium and radiation defects in solids

Koshkin, V. M.; Gal'chinetskii, L. P.; Kulik, V. N.; Minkov, B.I.; Ulmanis, U.

doi:10.1016/0038-1098(73)90054-9

Cited by 48 publications

(8 citation statements)

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“…Indium monoselenide (InSe) is an important III-VI layered semiconductor extensively studied in recent years due to its promising optical and electrical properties that are suitable for the fabrication of thin film solar cells [1], switching devices [2], radiation detectors [3], Schottky diodes [4] and Li-solid-state batteries [5]. The layered structure of InSe allows the tuning of its electrical properties by means of intercalation so as to suit the processing of various semiconductor devices [6].…”

Section: Introductionmentioning

confidence: 99%

Optical and low-temperature thermoelectric properties of phase-pure p-type InSe thin films

et al. 2015

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Polycrystalline phase-pure p-type InSe thin films were deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 473 ± 5 K and pressure of 10 -5 mbar. The as-prepared InSe thin films were analyzed by X-ray diffractometry, energy-dispersive X-ray spectroscopy, atomic force microscopy, UV-Vis-NIR spectroscopy, electrical conductivity and Hall measurements. The lattice parameters, particle size, dislocation density, number of crystallites per unit area and the lattice strain of the prepared InSe thin films were calculated and found as a = 4.00 ± 0.002 Å and c = 16.68 ± 0.002 Å , 48 ± 2 nm, 4.34 9 10 10 lines cm -2 , 15.37 9 10 10 cm -2 and 1.8 9 10 -3 , respectively. The as-deposited InSe thin films showed a direct allowed transition with an optical band gap of 1.35 ± 0.02 eV and high absorption coefficient of about 10 5 cm -1 . The oscillator energy (E o ) and dispersion energy (E d ) were calculated using the single-oscillator Wemple and DiDomenico model. The p-type conductivity and photosensitivity of the as-prepared InSe thin films confirmed their potential application in photovoltaic devices. The mean free path, relaxation time, density of states, Fermi energy and effective mass of holes in the film were determined by correlating the results of thermopower and Hall measurements. The sudden and sharp increase in thermopower from 80 to 37 K was explained as due to the effect of phonon drag on charge carriers.

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Section: Introductionmentioning

confidence: 99%

Optical and low-temperature thermoelectric properties of phase-pure p-type InSe thin films

et al. 2015

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“…4 The presence of stoichiometric vacancies in this class of material also leads to a loose crystal structure, which allows for anomalously high radiation stability by minimizing Frenkel pair production from incident radiation; parameters, such as charge carrier concentration, charge carrier mobility, and microhardness measured before and after irradiation showed little or no change. [5][6][7] As a result, such materials may also have potential as nuclear particle detectors for high energy physics or security applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of vacancies on the structure and properties of Ga2(Se0.33Te0.67)3

Abdul-Jabbar

Forrest

Gronsky

et al. 2015

Journal of Applied Physics

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Ga 2 (Se 0.33 Te 0.67) 3 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga 2 (Se 0.33 Te 0.67) 3 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga 2 (Se 0.33 Te 0.67) 3 is highly dependent on thermal annealing. It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga 2 (Se 0.33 Te 0.67) 3 (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga 2 (Se 0.33 Te 0.67) 3 material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga 2 (Se 0.33 Te 0.67) 3 band gap redshifts by 0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means, such as doping.

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“…Additional work on Ga 2 Te 3 has also shown it could be an attractive material for phase-change random access memory applications as it shows better data retention ability, low power consumption, and high dynamical electric switching ratios when compared to the more widely studied Ge 2 Sb 2 Te 5 4 . The presence of stoichiometric vacancies in this class of material also leads to a loose crystal structure, which allows for anomalously high radiation stability by minimizing Frenkel pair production from incident radiation; parameters such as charge carrier concentration, charge carrier mobility, and microhardness measured before and after irradiation showed little or no change [5][6][7] . As a result, such materials may also have potential as nuclear particle detectors for high energy physics or security applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of stoichiometric vacancies on the structure and properties of the Ga2SeTe2 compound semiconductor

Abdul-Jabbar¹,

Forrest²,

Gronsky³

et al. 2015

Preprint

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Ga 2 SeTe 2 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga 2 SeTe 2 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga 2 SeTe 2 is highly dependent on thermal annealing.It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga 2 SeTe 2 (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga 2 SeTe 2 material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga 2 SeTe 2 band gap redshifts by ≈0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means such as doping.

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Unstable equilibrium and radiation defects in solids

Cited by 48 publications

References 0 publications

Optical and low-temperature thermoelectric properties of phase-pure p-type InSe thin films

Optical and low-temperature thermoelectric properties of phase-pure p-type InSe thin films

Effect of vacancies on the structure and properties of Ga2(Se0.33Te0.67)3

Effect of stoichiometric vacancies on the structure and properties of the Ga2SeTe2 compound semiconductor

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