Abstract:Ga 2 (Se 0.33 Te 0.67) 3 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga 2 (Se 0.33 Te 0.67) 3 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga 2 (Se 0.33 Te 0.67) 3 is hig… Show more
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