Herein, the crystal structure and the magnetic and electrical properties of two Ga‐rich, off‐stoichiometric full Heusler‐type compositions Ga2−xMn1+xCo with x = 0.2 and 0.4 are investigated. The innate site disorder in the crystal structure is clarified using synchrotron X‐ray diffraction (XRD) studies. Experimentally, it is observed that a control over magnetic ordering temperature (TnormalC) and total magnetic moment can be achieved by tuning the Ga:Mn ratio in these alloys. Consequently, for the resultant compositions, Ga1.8Mn1.2Co and Ga1.6Mn1.4Co, Curie temperatures of ≈245 and 375 K, respectively, are obtained, lying in the vicinity of room temperature. The atomic site disorder arising out of excess Mn leads to spin fluctuation scattering which is reflected in its magnetic and transport properties. Temperature dependence of resistivity shows an anomalous occurrence of a maximum, reflecting a change in the sign of the temperature coefficient of resistance, coincidental with TnormalC. Furthermore, the magnetization results indicate an itinerant‐type ferromagnetic ground state over the Heisenberg‐type state, with the moment values as low as 0.35 μnormalB.