2018
DOI: 10.1088/1361-648x/aaf0c7
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Unraveling the physical properties and superparamagnetism in anti-site disorder controlled Fe2TiSn

Abstract: With an aim to control the anti-site disorder between Fe and Ti atoms in the full Heusler alloy, FeTiSn, we substitute a small percentage of Ti at Fe site to form the FeTiSn () series. Using the incident x-rays tuned to the Fe K-edge absorption energy, we record the high resolution synchrotron x-ray diffraction profiles and unambiguously show the reduction in anti-site disorder. In particular, the Fe–Ti anti-site disorder decreases up to an excess Ti content of 0.07; further increase of Ti content leads to dis… Show more

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Cited by 7 publications
(5 citation statements)
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“…The zero-field T variation of ρ of CoFeVGa shows a semiconducting character (see figure 35(a)) at least down to 90 K associated with a broad hump-like feature and resistivity drops with further lowering of T. The low-T data below AFM-like transition at T N = 20 K is associated with an upturn that follows an activated behaviour, (ρ ∼ exp(E g /T)) (figure 35(c)). A similar low-T upturn is also discussed earlier in the case of Fe 2 TiSn [121] but the origin is different in these two cases. For Fe 2 TiSn, it is attributed to weak localization effect (obeying a T 1/2 dependence) but for CoFeVGa, the upturn follows an exponential nature and is insensitive to the magnetic field that rules out the weak localization theory.…”
Section: Cofetisn and Cofevgasupporting
confidence: 78%
See 3 more Smart Citations
“…The zero-field T variation of ρ of CoFeVGa shows a semiconducting character (see figure 35(a)) at least down to 90 K associated with a broad hump-like feature and resistivity drops with further lowering of T. The low-T data below AFM-like transition at T N = 20 K is associated with an upturn that follows an activated behaviour, (ρ ∼ exp(E g /T)) (figure 35(c)). A similar low-T upturn is also discussed earlier in the case of Fe 2 TiSn [121] but the origin is different in these two cases. For Fe 2 TiSn, it is attributed to weak localization effect (obeying a T 1/2 dependence) but for CoFeVGa, the upturn follows an exponential nature and is insensitive to the magnetic field that rules out the weak localization theory.…”
Section: Cofetisn and Cofevgasupporting
confidence: 78%
“…This is called the weak localization effect, where the constructive interference of the backscattered electrons from the disorder sites localizes the carriers and an insulating state emerges [123,124]. The low-T upturn in the ρ(T ) data follows a T 1/2 dependence and it disappears under an applied magnetic field supporting the weak localization model in Fe 2 TiSn [121]. It is to be noted that ab initio electronic structure calculation on ordered Fe 2 TiSn indicates a non-magnetic ground state with a small pseudo-gap of about 0.07 eV at the Fermi level [119].…”
Section: Fe-based Compoundsmentioning
confidence: 67%
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“…A similar straightforward analysis considering the ratio of (111)/(220) peak in terms of Y–Z disorder will be unreliable as the (111) reflection would be adversely affected due to the similar X‐ray scattering factors for Mn and Co atoms. To circumvent the problem, in future, an anomalous XRD technique [ 27,28 ] using a synchrotron source or neutron diffraction measurement [ 29 ] can be adopted.…”
Section: Resultsmentioning
confidence: 99%