2003
DOI: 10.1063/1.1555700
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Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications

Abstract: Articles you may be interested inMonolithic integration of common mode filters with electrostatic discharge protection on silicon/porous silicon hybrid substrate Appl. Phys. Lett.An isolation technology for radio frequency ͑rf͒ applications based on unoxidized porous Si ͑PS͒ is demonstrated. This study examines all the important issues pertinent to incorporating PS with Si very-large-scale integration ͑VLSI͒ technology, where PS is used as a semi-insulating material. Specifically, the issues on rf isolation pe… Show more

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Cited by 30 publications
(8 citation statements)
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References 26 publications
(17 reference statements)
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“…Using quartz and high-resistivity silicon as substrates has been investigated, however the material costs are high. Adopting a layer of silicon dioxide [1], silicon nitride or oxidized porous silicon as an isolation layer may present a problem of thermal expansion mismatching between the silicon substrate and these dielectric layers [2]. Using the unoxidized porous silicon as a dielectric layer avoids the problem of thermal expansion mismatching [2], yet it limits many RF MEMS applications and is not suited to flexible processes due to the usage of hydrofluoric acid during the process of forming unoxidized porous silicon.…”
Section: Introductionmentioning
confidence: 99%
“…Using quartz and high-resistivity silicon as substrates has been investigated, however the material costs are high. Adopting a layer of silicon dioxide [1], silicon nitride or oxidized porous silicon as an isolation layer may present a problem of thermal expansion mismatching between the silicon substrate and these dielectric layers [2]. Using the unoxidized porous silicon as a dielectric layer avoids the problem of thermal expansion mismatching [2], yet it limits many RF MEMS applications and is not suited to flexible processes due to the usage of hydrofluoric acid during the process of forming unoxidized porous silicon.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the modulation of electronic and optoelectronic properties of np-Si has attract intense research interest due to their widely application in nanoscale physics and silicon-based devices 2 – 5 . For example, compared with silicon-based insulators, np-Si as substrate isolation material in Si-integrated RF devices shows a lot of significant advantages 6 9 , including elimination of RC signal delay, reduction of the power consumption and wire cross talk. These advantages are realized as a result of that controlled porosity could reduce the effective permittivity.…”
Section: Introductionmentioning
confidence: 99%
“…Such a substrate is a thick porous Si layer with high porosity, which can be optimized for best device performance by choosing the appropriate layer thickness, in order to minimize electromagnetic propagation losses into Si, and the appropriate low values of the dielectric permittivity, ε r , and loss tangent. These last values are tunable by changing the material structure and morphology [ 1 - 6 ].…”
Section: Introductionmentioning
confidence: 99%