Unleashing the potential of gallium oxide: A paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications

Al-Hardan, Naif H.; Abdul Hamid, Muhammad Azmi; Jalar, Azman; Firdaus-Raih, Mohd

doi:10.1016/j.mtphys.2023.101279

Cited by 3 publications

(5 citation statements)

References 181 publications

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“…The conductivity of structures for both types in the absence of radiation is determined by space-charge-limited currents (SCLCs) in a trap semiconductor. The transition voltage from Ohm's law to the power law dependence of current on voltage depends on the concentration of traps in the oxide film Nt and is proportional to d 2 , as follows from Expression (2). Transition voltage increases with the increasing concentration of free traps (those that have not captured electrons).…”

Section: Discussionmentioning

confidence: 97%

“…In recent years, the exploration of advanced materials for electronic devices has led to the emergence of gallium oxide (Ga 2 O 3 ) as a promising semiconductor for various applications, particularly in the development of detectors [1,2]. Gallium oxide, a wide-bandgap semiconductor (E g = 4.4-5.3 eV), exhibits unique properties that make it well suited for high-performance ultraviolet sensors [3,4].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures

Kalygina,

Tsymbalov,

Korusenko

et al. 2024

Crystals

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Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films were deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in an Ar/O2 gas mixture. The films are sensitive to ultraviolet radiation with wavelength λ = 254. Structures with interdigital electrode topology have pronounced persistent conductivity. It is shown that the magnitude of responsivity, response time τr, and recovery time τd are determined by the concentration of free holes p involved in recombination processes. For the first time, it is proposed to consider hole trapping both by surface states Nts at the metal/Ga2O3 interface and by traps in the bulk of the film.

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Section: Discussionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures

Kalygina,

Tsymbalov,

Korusenko

et al. 2024

Crystals

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“…Compared to other materials (e.g. metal oxide [47][48][49], organic material [50][51][52], graphene [53] and gallium arsenide [54][55][56]), perovskites and TMDs exhibit adjustable band gap and high quantum efficiency [57][58][59][60][61][62]. In addition, by changing the halogen species in perovskites and constructing the TMD based heterostructures, the photoelectric properties of materials and devices can be modulated and optimized [63].…”

Section: Optoelectronic Materialsmentioning

confidence: 99%

In-sensor neuromorphic computing using perovskites and transition metal dichalcogenides

Li,

Zhou

et al. 2024

J. Phys. Mater.

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With the advancements in Web of Things, Artificial Intelligence, and other emerging technologies, there is an increasing demand for artificial visual systems to perceive and learn about external environments. However, traditional sensing and computing systems are limited by the physical separation of sense, processing, and memory units that results in the challenges such as high energy consumption, large additional hardware costs, and long latency time. Integrating neuromorphic computing functions into the sensing unit is an effective way to overcome these challenges. Therefore, it is extremely important to design neuromorphic devices with sensing ability and the properties of low power consumption and high switching speed for exploring in-sensor computing devices and systems. In this review, we provide an elementary introduction to the structures and properties of two common optoelectronic materials, perovskites and transition metal dichalcogenides (TMDs). Subsequently, we discuss the fundamental concepts of neuromorphic devices, including device structures and working mechanisms. Furthermore, we summarize and extensively discuss the applications of perovskites and TMDs in in-sensor computing. Finally, we propose potential strategies to address challenges and offer a brief outlook on the application of optoelectronic materials in term of in-sensor computing.

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“…Additionally, these wet chemical solution processes are effective for preparing various types of Ga 2 O 3 -based nanomaterials [17]. Ga 2 O 3 was also investigated for memristors and neuromorphic computing, with resistive switching mechanisms reliant on the formation and dissolution of conductive filaments in a metal-semiconductor-metal (MSM) structure, mainly due to the oxygen vacancies in Ga 2 O 3 [18,19]. For n-type dopants, the Group IV elements Si, Ge, and Sn form shallow donor states in Ga 2 O 3 [20].…”

Section: Introductionmentioning

confidence: 99%

“…These JTEs served to inhibit the electric field crowding in proximity to the Schottky contact, thus facilitating efficient charge extraction during device switching. Ma et al[46] demonstrated the control of p-type doping in NiO x in the range of <1018 to 2 × 10 18 cm −3 by changing the O 2 partial pressure during RF magnetron sputtering. Precise control of p-type doping allows for charge balance in the n-type Ga 2 O 3 region, leading to SBDs with ~8 kV BV.…”

mentioning

confidence: 99%

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

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Unleashing the potential of gallium oxide: A paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications

Cited by 3 publications

References 181 publications

Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures

Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures

In-sensor neuromorphic computing using perovskites and transition metal dichalcogenides

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

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