Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs

Ohgata, K.; Ogasawara, M.; Shiga, K.; Tsujikawa, Shigeo; Murakami, Eiichi; Kato, Hiroaki; Umeda, Hiroshi; Kubota, K.

doi:10.1109/relphy.2005.1493115

Cited by 24 publications

(13 citation statements)

References 9 publications

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“…When the ratio J hole /J electron is high, each V O will capture holes (V O In p-FETs, the breakdown of HfSiON/SiO 2 stacks may arise from the breakdown of interfacial SiO 2 layer, as shown in Fig.2. In breakdown of thin SiO 2 , hydrogen release (HR) model have been widely accepted [12][13][14][15]. According to the model, T bd can be described by following equation.…”

Section: Ecs Transactions 33 (3) 507-519 (2010)mentioning

confidence: 99%

(Invited) A Study of Dielectric Breakdown Mechanisms in MG/HK MISFETs: From the Viewpoint of TDDB Statistics

Izumi¹,

Kato²,

Nakasaki³

et al. 2010

ECS Trans.

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The Time Dependent Dielectric Breakdown mechanisms of n/pFETs having high-k gate dielectrics have been studied through the Weibull distribution. From the thickness dependence of Weibull β, it is found that the breakdown in n-FETs and p-FETs is mostly determined by the breakdown of high-k layer and interfacial layer (I.L.), respectively. Furthermore, Weibull β in p-FETs is found to be independent of the injected carrier ratio (J hole /J electron ) while those in n-FETs strongly depend on this ratio. Improvement of Weibull β through the control of the injected carrier ratio together with metal gate application leads to extremely longer lifetime in nFETs. Improvement of average T bd through the control of hydrogen concentration in high-k leads to longer life time also in p-FETs.

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Section: Ecs Transactions 33 (3) 507-519 (2010)mentioning

confidence: 99%

(Invited) A Study of Dielectric Breakdown Mechanisms in MG/HK MISFETs: From the Viewpoint of TDDB Statistics

Izumi¹,

Kato²,

Nakasaki³

et al. 2010

ECS Trans.

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“…with m=0.38 (time-exponent of N ot [6]) and δ=47 (voltage acceleration of t BD seen in NMOS and in PMOS at higher voltages [1,2], see Fig. 1).…”

Section: Simulationsmentioning

confidence: 99%

“…1). In [1][2][3][4], this was attributed to additional hydrogen released from the interface which enhances bulk defect generation or a change in injection mechanism. Here, we show that the lower voltage scaling parameter for PMOS devices can be primarily attributed to the statistics of conductive path formation when different defect generation mechanisms exist in the bulk and at the interface, with the latter also leading to NBTI.…”

Section: Introductionmentioning

confidence: 99%

TDDB in the presence of interface states: Implications for the PMOS reliability margin

Nigam¹,

Peumans

2008

2008 IEEE International Electron Devices Meeting

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“…Reliability of silicon dioxide (SiO 2 ) and oxynitride (SiON) for the gate oxide insulator material in metal-oxide semiconductor (MOS) devices have been investigated well by process development and failure analysis [1][2][3][4]. In recent years, for downscaling equivalent oxide thickness, high-k layers for gate oxide material are applied to advanced devices [5].…”

Section: Introductionmentioning

confidence: 99%

Atomic-level study of TDDB mechanism of Hf-doped SiON gate dielectrics using Cs-corrected STEM and atom probe tomography

Kudo

Hirose

Funayama

et al. 2013

2013 IEEE International Reliability Physics Symposium (IRPS)

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A detailed structural analysis of Hf-doped SiON dielectrics was performed by using advanced physical analysis techniques: Cs-corrected scanning transmission electron microscopy (STEM) and three-dimensional (3-D) atom-probe (AP) tomography. We confirmed that the distribution and agglomeration of Hf atoms cause a time dependent dielectric breakdown (TDDB) in Hf-doped SiON dielectrics gate stacks.We revealed that the behavior of Hf atoms in dielectrics is related to the TDDB lifetime, which depends on Hf concentration and the polarity of electrodes. The TDDB mechanism of Hf-doped SiON dielectrics was successfully revealed in detail, based on physical analysis results. Keywords -physical analysis; Cs-corrected scanning transmission electron microscopy (STEM); three-dimensional (3-D) atom-probe (AP) tomography; time dependent dielectric breakdown (TDDB); Hf-doped SiON dielectrics

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Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs

Cited by 24 publications

References 9 publications

(Invited) A Study of Dielectric Breakdown Mechanisms in MG/HK MISFETs: From the Viewpoint of TDDB Statistics

(Invited) A Study of Dielectric Breakdown Mechanisms in MG/HK MISFETs: From the Viewpoint of TDDB Statistics

TDDB in the presence of interface states: Implications for the PMOS reliability margin

Atomic-level study of TDDB mechanism of Hf-doped SiON gate dielectrics using Cs-corrected STEM and atom probe tomography

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