Universal visible emitters in nanoscale integrated photonics

Spektor, Grisha; Carlson, David; Newman, Zach; Skarda, Jinhie; Sapra, Neil V.; Su, Logan; Jammi, Sindhu; Ferdinand, A. Christy; Agrawal, Amit; Vučković, Jelena; Papp, Scott B.

doi:10.1364/optica.486747

Cited by 10 publications

(1 citation statement)

References 93 publications

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“…Visible‐wavelength photonic integrated circuits (PICs) are highly desired for emerging applications in, for example, quantum optics, atomic clocks, and biological sensing and artificial reality displays. [ 1–4 ] Low‐loss waveguides in the visible region can be realized on silicon nitride (SiN), aluminum nitride (AlN), and lithium niobate (LN) platforms but these do not have monolithic active devices such as lasers, detectors, or modulators. The light must be delivered from an external source using end‐fire or grating coupling.…”

Section: Introductionmentioning

confidence: 99%

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Genc,

Zubialevich,

Hazarika

et al. 2023

Advanced Photonics Research

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The success of silicon photonics is sparking widespread interest in photonic integrated circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact active circuits desire the heterogeneous integration of GaN‐based laser diodes. Herein, the optimization of smooth and vertical facets is reported using a combination of inductively coupled plasma etching followed by wet etching with a tetramethylammonium hydroxide‐based solution. Facet quality for concave‐, flat‐, and convex‐shaped structures surrounding the mirror is compared. Convex‐shaped structures result in the highest facet quality due to the evolution of the crystal plane‐dependent etching. 2 μm‐wide ridge waveguide, etched facet Fabry–Pérot cavity lasers with length of 1.5 mm emitting at 457 nm are realized using the optimized process. The lasers deliver up to 28 mW of optical power at 250 mA under continuous wave with slope efficiency of 0.26 W A−1 and lasing threshold current density of 4.6 kA cm−2.

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Section: Introductionmentioning

confidence: 99%

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Genc,

Zubialevich,

Hazarika

et al. 2023

Advanced Photonics Research

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Antireflective Multi‐Dielectric Metasurfaces Operating in the Visible

Koksal,

Song,

Wang

et al. 2023

Laser & Photonics Reviews

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As increasingly more demanding photonics applications are brought on‐chip, more complex design solutions are employed to deliver enhanced performance: e.g., meta‐molecules, inverse‐designed freeform structures, and multilayer metasurfaces. Instead, this study introduces anti‐reflective metasurfaces fabricated in a single nanolithography step that follows deposition of multiple dielectrics onto a substrate. Anti‐reflective metasurfaces offer fundamentally better transmission efficiencies compared to conventional equivalents. Conventional and anti‐reflective metalenses, both fabricated in the Ta2O5/SiO2 material platform for 461 nm operation, show an improvement in focusing efficiencies from ≈ 55% to ≈ 90% at low numerical apertures and from ≈ 35% to ≈ 65% at high numerical apertures. Simulations of ideal and imperfect metalenses indicate that anti‐reflective metasurfaces not only improve transmission at the design library level, but also reduce spurious diffraction and protect against higher‐order scattering.

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Anneal-free ultra-low loss silicon nitride integrated photonics

Bose,

Harrington,

Isichenko

et al. 2024

Light Sci Appl

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Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III–V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low anneal-free losses for both nitride core and oxide cladding, enabling 1.77 dB m-1 loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported sub 300 °C process. For 800 nm-thick nitride, we achieve as good as 8.66 dB m−1 loss and 4.03 million Q, the highest reported Q for a low temperature processed resonator with equivalent device area, with a median of loss and Q of 13.9 dB m−1 and 2.59 million each respectively. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity, and using a thick nitride micro-resonator we demonstrate OPO, over two octave supercontinuum generation, and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.

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Universal visible emitters in nanoscale integrated photonics

Cited by 10 publications

References 93 publications

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Antireflective Multi‐Dielectric Metasurfaces Operating in the Visible

Anneal-free ultra-low loss silicon nitride integrated photonics

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