Universal visible emitters in nanoscale integrated photonics

Spektor, Grisha; Carlson, David; Newman, Zach; Skarda, Jinhee Lee; Sapra, Neil V.; Su, Logan; Jammi, Sindhu; Ferdinand, A. Christy; Agrawal, Amit; Vučković, Jelena; Papp, Scott B.

doi:10.48550/arxiv.2206.11966

Cited by 1 publication

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“…Visible-wavelength photonic integrated circuits (PICs) are highly desired for emerging applications in, for example, quantum optics, atomic clocks, and biological sensing and artificial reality displays. [1][2][3][4] Low-loss waveguides in the visible region can be realized on silicon nitride (SiN), aluminum nitride (AlN), and lithium niobate (LN) platforms but these do not have monolithic active devices such as lasers, detectors, or modulators. The light must be delivered from an external source using end-fire or grating coupling.…”

Section: Introductionmentioning

confidence: 99%

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Genc,

Zubialevich,

Hazarika

et al. 2023

Advanced Photonics Research

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The success of silicon photonics is sparking widespread interest in photonic integrated circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact active circuits desire the heterogeneous integration of GaN‐based laser diodes. Herein, the optimization of smooth and vertical facets is reported using a combination of inductively coupled plasma etching followed by wet etching with a tetramethylammonium hydroxide‐based solution. Facet quality for concave‐, flat‐, and convex‐shaped structures surrounding the mirror is compared. Convex‐shaped structures result in the highest facet quality due to the evolution of the crystal plane‐dependent etching. 2 μm‐wide ridge waveguide, etched facet Fabry–Pérot cavity lasers with length of 1.5 mm emitting at 457 nm are realized using the optimized process. The lasers deliver up to 28 mW of optical power at 250 mA under continuous wave with slope efficiency of 0.26 W A−1 and lasing threshold current density of 4.6 kA cm−2.

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Section: Introductionmentioning

confidence: 99%