Universal Passivation for p++ and n++ Areas on IBC Solar Cells

Carstens, Kai; Dahlinger, M.; Hoffmann, Erik; Köhler, Jürgen; Zapf-Gottwick, Renate; Werner, Jürgen

doi:10.1016/j.egypro.2015.07.110

Cited by 7 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared to AlO x /SiN x :H, the limited a-Si:H passivation on the (p + ) c-Si surface is a striking result of this experiment. Such effect was previously evidenced for highly doped homo-emitters obtained from homojunction-type boron diffusion with saturation current densities J 0e above 100 fAcm −2 and sheet resistances lower than 200 Ω/ϒ [46,47].…”

Section: A-si:h Passivation On Boron-doped Surfacessupporting

confidence: 59%

“…Thus, the involved mechanism seems to be related to as-deposited a-Si:H hydrogen content and H configuration variation from poly-hydride to mono-hydride configurations upon annealing [17]. J 0e values as low as 30 fAcm −2 for 30 nm thick (i) a-Si:H passivation on a stronger diffused homo-emitter (R □ = 90 Ω/□) have been reported using a 150°C deposition temperature and post-deposition annealing of 5 min at 350°C [47]. Additional post-process annealing steps up to 300°C have been performed on our samples but no effective lifetime increase has been observed.…”

Section: A-si:h Passivation On Boron-doped Surfacesmentioning

confidence: 96%

“…We have evidenced in this first experiment a limited chemical passivation of a-Si:H on strongly boron-doped surfaces. Interestingly, Carstens et al demonstrated that tuning the (i) a-Si:H deposition and annealing temperature could improve the passivation on boron-doped c-Si surfaces [47]. The passivation level is maximized when a-Si:H is deposited at low temperature.…”

Section: A-si:h Passivation On Boron-doped Surfacesmentioning

confidence: 99%

See 2 more Smart Citations

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Carrere

Lachaume

Thai

et al. 2018

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

A B S T R A C TThe novel solar cell architecture called silicon homo-heterojunction (HHJ) cell is investigated combining experimental and simulation approaches. This structure intends to overcome the limitations of the silicon heterojunction technology regarding the amorphous/ crystalline silicon interface (p) a-Si:H/(i) a-Si:H /(n) c-Si) by the addition of a (p + ) c-Si layer at the hetero-interface. First, the added (p + ) c-Si layer is experimentally investigated using boron implantation through the realization and characterization of symmetric solar cell precursors. An adapted process flow taking into account the (p + ) c-Si profile optimization, the annealing effects on substrate degradation, and the impact on surface passivation, is deeply explored. Then, large area solar cells are processed and the solar cell performance are discussed in view of the data obtained on precursors and with the help of realistic numerical simulations. Overall, we observe that the HHJ solar cells exhibit a small performance improvement compared to reference heterojunction cells. In particular, a gain in the fill factor is observed, which is shown to be originated from both an improvement in field effect and a decrease of the vertical series resistance from the a-Si:H layers. The experimental data obtained on the processed homo-heterojunction solar cells confirm that this technology can lead to improved conversion efficiencies compared to the high quality reference heterojunction solar cells.

show abstract

Section: A-si:h Passivation On Boron-doped Surfacessupporting

confidence: 59%

Section: A-si:h Passivation On Boron-doped Surfacesmentioning

confidence: 96%

Section: A-si:h Passivation On Boron-doped Surfacesmentioning

confidence: 99%

See 1 more Smart Citation

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Carrere

Lachaume

Thai

et al. 2018

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

show abstract

“…Successful application of a‐Si films to different cell architectures has continued to expand as for example noted in Refs. . The main disadvantage of a‐Si films is, however, the sensitivity to subsequent high‐temperature processes which are often required in industrial manufacturing technology.…”

Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

224

161

View full text Add to dashboard Cite

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

show abstract

“…Details on the complete process sequence are published elsewhere. 8,31) Figures 8(a)-8(d) illustrate the four laser processes: First, laser doping of the boron emitter from a sputtered boron containing source, where a nanosecond pulsed line focused laser beam 32,33) with a wavelength of λ = 532 nm and a pulse duration of approximately 50 ns, scans over the wafer surface and locally dopes the emitter [see Fig. 8(a)].…”

Section: Application: Laser Processed Back Contact Solar Cellsmentioning

confidence: 99%

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Carstens¹,

Dahlinger²,

Hoffmann³

et al. 2017

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

show abstract

Universal Passivation for p++ and n++ Areas on IBC Solar Cells

Cited by 7 publications

References 9 publications

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Dielectric surface passivation for silicon solar cells: A review

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Contact Info

Product

Resources

About