Uniting GaN Electronics and Photonics on A Single Chip

Yan, Jiabin; Wang, Lining; Jia, Bolun; Ye, Ziqi; Zhu, Hongbo; Choi, H. W.; Wang, Yongjin

doi:10.1109/jlt.2021.3094850

Cited by 19 publications

(7 citation statements)

References 28 publications

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“…The critical challenge for this chip is how to monolithically integrate energy storage, driver and receiver into a single GaN chip. Recently, without involving re-growth or post-growth doping, we successfully integrated GaN metal-oxide-semiconductor field effect transistors (MOSFETs), transmitter, waveguide, and receiver into a single chip 38 . The capability of integrating optoelectronics (transmitter, waveguide, receiver) with MOSFETs would inevitably open up new horizons for the GaN multicomponent systems with new interactive functions and multitasking devices.…”

Section: Resultsmentioning

confidence: 99%

“…In addition to light emission, GaN-based quantum well diodes (QWDs) can convert light into different forms of electricity and signals via the photovoltaic effect, simultaneously exhibiting inherent light detection, emission and energy-harvesting functionalities [32][33][34][35][36] . Multiple GaN QWDs combined into a single chip will simultaneously achieve different functions 37,38 .…”

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confidence: 99%

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Wireless light energy harvesting and communication in a waterproof GaN optoelectronic system

et al. 2022

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Wireless technologies can be used to track and observe freely moving animals. InGaN/GaN light-emitting diodes (LEDs) allow for underwater optical wireless communication due to the small water attenuation in the blue-green spectrum region. GaN-based quantum well diodes can also harvest and detect light. Here, we report a monolithic GaN optoelectronic system (MGOS) that integrates an energy harvester, LED and SiO2/TiO2 distributed Bragg reflector (DBR) into a single chip. The DBR serves as waterproof layer as well as optical filter. The waterproof MGOS can operate in boiling water and ice without external interconnect circuits. The units transform coded information from an external light source into electrical energy and directly activate the LEDs for illumination and relaying light information. We demonstrate that our MGOS chips, when attached to Carassius auratus fish freely swimming in a water tank, simultaneously conduct wireless energy harvesting and light communication. Our devices could be useful for tracking, observation and interacting with aquatic animals.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Wireless light energy harvesting and communication in a waterproof GaN optoelectronic system

et al. 2022

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“…The ABO3 perovskite-type materials, which have good chemical and physical stability and a diversity of structural and compositional characteristics, can be served as the excellent hosts for WLED Bulletin of Electr Eng & Inf ISSN: 2302-9285  phosphors. LaAlO3 (LAO) is one of the potential host materials for conversion phosphors, a substrate for superconductors, a giant magneto-resistive material, and magnetic thin sheets due to its broad bandgap and noticeably low photon power [8], [9]. The white emission of LaAlO3:Dy 3+ (LAO:Dy 3+ ) nanomaterial draws a lot of attention owing to the strong line of emission of Dy 3+ exhibiting in the visible spectral regions of yellow (574 nm, 4F9/2→6H13/2) and blue (482 nm, 4F9/2→6H15/2) [10], [11].…”

Section: Introductionmentioning

confidence: 99%

Blue-yellow emissive LaAlO<sub>3</sub>:Dy<sup>3+</sup> phosphor for high bright white light-emitting diodes

Tung

Dang

2023

Bulletin EEI

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LaAlO3:Dy3+ (LAO:Dy3+) with blue-yellow emission for brilliant white light of light-emitting diodes (LEDs) was prepared using gel-combustion process. The chemical content of the created material was confirmed using energy dispersive X-ray analysis (EDX). The transmission electron microscopy was used to examine the phosphor crystal size and morphology. The luminescence analysis showed that LAO:Dy3+ phosphors exhibited peaks at 482 nm (blue) and 574 nm (yellow), attributed to the transitions 4F 9/2à6H 15/2 and 4F 9/2à6H 13/2, respectively. The investigating of correlated color temperature (CCT) and Commission International de L'Eclairage (CIE) described that the phosphor LAO:Dy3+ helped to attained good CCT coordination and bright cool-white emission under ultraviolet (UV) stimulation. However, when using in white LED fabrication, the concentration of LAO:Dy3+ should be modified to fulfill the need from manufactures. According to results from this work, the white light luminescence intensity and color rendering performance may be reduced if the LAO:Dy3+ is high (10%) because of too much scattering. On the other hand, such scattering improvements offered by LAO:Dy3+ phosphor is beneficial to reduce the color deviance for better color uniformity of light.

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“…The comprehensive performance of the devices under different optical and electrical conditions was hence neglected. In recent years, GaN-based optoelectrical devices have gained more attention from researchers aiming to design III-V integrated photonic devices and systems with low energy consumption and attractive multifunction [14][15][16]. HEMT-based UVPTs have been a building block for III-V integrated photonics [17,18].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure

Chen¹,

Chen²,

Zeng³

et al. 2022

Semicond. Sci. Technol.

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Optoelectronic performance of ultraviolet phototransistors (UVPTs) based on AlGaN/GaN high-electron-mobility transistor (HEMT) configuration is comprehensively studied under different illumination wavelengths, light power densities, gate biases, and drain voltages. A special photoresponse mechanism combining photovoltaic effect and photoconductive effect is proposed to explain the variation of detection performance with the optical and electrical conditions. By comparing the photoreponse characteristics under typical illumination wavelengths of 310 nm and 360 nm, the optoelectronic properties of the HEMT-based UVPTs are deeply revealed and summarized. This work can provide suggestions and guidelines for designing of AlGaN/GaN-based UVPTs in III-V integrated photonic systems.

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Uniting GaN Electronics and Photonics on A Single Chip

Cited by 19 publications

References 28 publications

Wireless light energy harvesting and communication in a waterproof GaN optoelectronic system

Wireless light energy harvesting and communication in a waterproof GaN optoelectronic system

Blue-yellow emissive LaAlO<sub>3</sub>:Dy<sup>3+</sup> phosphor for high bright white light-emitting diodes

Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure

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