Abstract:Ferroelectricity is usually found in cubic and hexagonal perovskites consisting of corner-and faced-shared BX 6 octahedra, respectively. In contrast, another important branch of perovskites, postperovskites, which contain layers constructed by both edge-and corner-shared BX 6 octahedra, have been much more scarcely studied and virtually absent in the fields of ferroelectricity since the discovery of postperovskite structure in 1965. In this study, we present for the first time a molecular postperovskite ferroe… Show more
“…Generally, the intrinsic in‐plane anisotropy is suitable to develop polarization‐sensitive photodetector 61,62. To utilize the strong anisotropy of 2D Sb 2 Se 3 flakes, 12 electrodes were fabricated on the same flake with 30° in between, as illustrated in a,b (the thickness of the Sb 2 Se 3 flake is ≈24 nm confirmed by AFM).…”
As an important member of group VA–VIA semiconductors, 2D Sb2Se3 has drawn widespread attention thanks to its outstanding optoelectronic properties as compared to the bulk material. However, due to the intrinsic chain‐like crystal structure, the controllable synthesis of ultrathin 2D planar Sb2Se3 nanostructures still remains a huge challenge. Herein, for the first time, the crystal structure limitation is overcome and the successful structural evolution of 2D ultrathin Sb2Se3 flakes (as thin as 1.3 nm), by introducing a sodium‐mediated chemical vapor deposition (CVD) growth method, is realized. The formation of 2D planar geometry is mainly attributed to the preferential growth of (010) plane with the lowest formation energy. The thickness‐dependent band structure of 2D Sb2Se3 flakes shows a wide absorption band from UV to NIR region (300–1000 nm), suggesting its potential application in broadband photodetection. Strikingly, the Sb2Se3 flakes–based photodetector demonstrates excellent performance such as broadband response varying from UV to NIR region, high responsivity of 4320 mA W−1, fast response time (τrise ≈ 13.16 ms and τdecay ≈ 9.61 ms), and strong anisotropic ratio of 2.5@ 532 nm, implying promising potential application in optoelectronics.
“…Generally, the intrinsic in‐plane anisotropy is suitable to develop polarization‐sensitive photodetector 61,62. To utilize the strong anisotropy of 2D Sb 2 Se 3 flakes, 12 electrodes were fabricated on the same flake with 30° in between, as illustrated in a,b (the thickness of the Sb 2 Se 3 flake is ≈24 nm confirmed by AFM).…”
As an important member of group VA–VIA semiconductors, 2D Sb2Se3 has drawn widespread attention thanks to its outstanding optoelectronic properties as compared to the bulk material. However, due to the intrinsic chain‐like crystal structure, the controllable synthesis of ultrathin 2D planar Sb2Se3 nanostructures still remains a huge challenge. Herein, for the first time, the crystal structure limitation is overcome and the successful structural evolution of 2D ultrathin Sb2Se3 flakes (as thin as 1.3 nm), by introducing a sodium‐mediated chemical vapor deposition (CVD) growth method, is realized. The formation of 2D planar geometry is mainly attributed to the preferential growth of (010) plane with the lowest formation energy. The thickness‐dependent band structure of 2D Sb2Se3 flakes shows a wide absorption band from UV to NIR region (300–1000 nm), suggesting its potential application in broadband photodetection. Strikingly, the Sb2Se3 flakes–based photodetector demonstrates excellent performance such as broadband response varying from UV to NIR region, high responsivity of 4320 mA W−1, fast response time (τrise ≈ 13.16 ms and τdecay ≈ 9.61 ms), and strong anisotropic ratio of 2.5@ 532 nm, implying promising potential application in optoelectronics.
“…[ 1–4 ] Numerous efforts have been devoted to predict and prepare new 2D materials, facilitating the rapidly growing family of 2D materials including graphene, [ 5–7 ] black phosphorus (BP), [ 8–10 ] perovskite, [ 11–13 ] and transition metal dichalcogenides. [ 14,15 ] Very recently, a new 2D semiconductor Bi 2 O 2 Se reported by Peng et al. has gained wide interest due to its excellent electron mobility and good ambient stability.…”
Benefiting from the superior electron mobility and good air‐stability, the emerging layered bismuth oxyselenide (Bi2O2Se) nanosheet has received considerable attention with the promising prospects for electronics and optoelectronics applications. However, the high charge carrier concentration and bolometric effect of Bi2O2Se give rise to the high dark current and relatively slow photoresponse, which severely impede further improvement of the performance of Bi2O2Se based photodetectors. Here, a WSe2/Bi2O2Se Van der Waals p‐n heterostructure is reported with a pronounced rectification ratio of 105 and a low reverse dark current of 10−11 A, as well as an enhanced light on/off ratio up to 618 under 532 nm light illumination. The device also exhibits a fast response speed of 2.6 µs and a broadband detection capability from 365 to 2000 nm due to the efficient charge separation and strong interlayer coupling at the interface of the two flakes. Importantly, the built‐in potential in the WSe2/Bi2O2Se heterostructure offers a competitive self‐powered photodetector with the light on/off ratio above 105 and a photovoltaic responsivity of 284 mA W−1. The WSe2/Bi2O2Se heterostructure shows promising potentials for high‐performance self‐driven photodetector applications.
“…[ 51 ] The TaSe 6 and NiSe 4 units are arranged in metal chains along the a ‐axis, while the two kinds of units are alternately separated along the c axis, which is promising for in‐plane anisotropic applications. [ 47,52,53 ] Besides the layered structures, there are series of quasi‐layered GVTMCs formed by the intercalation of other transition metal atoms (V, Cr, Mn, Fe, Co, Ni) between the MX 2 layers to form distinct superstructures ( Figure h–j), leading to significant magnetic properties. [ 54 ] The intercalated metal atoms are located in the M sites.…”
2D materials have received considerable research interest owing to their abundant material systems and remarkable properties. Among them, 2D group VB transition metal chalcogenides (GVTMCs) stand out as emerging 2D metallic materials and significantly broaden the research scope of 2D materials. 2D GVTMCs have great advantages in electrical transport, 2D magnetism, charge density wave, sensing, catalysis, and charge storage, making them attractive in the fields of functional devices and energy chemistry. In this review, the recent progress of 2D GVTMCs is summarized systematically from fundamental properties, growth methodologies to potential applications. The challenges and prospects are also discussed for future research in this field.
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